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參數(shù)資料
| 型號： | 1N5534 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
| 中文描述： | 14 V, 0.48 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 封裝： | HERMETIC SEALED, GLASS, DO-35, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 196K |
| 代理商： | 1N5534 |
Low Voltage Avalanche
500 mW Zener Diodes DO-35
SCOTTSDALE DIVISION
1N5518B thru 1N5546B-1 DO-35
W
M
.
C
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25
o
C unless otherwise noted. Based on DC measurements at
thermal equilibrium;
V
F
= 1.1 Max @ IF = 200 mA for all types.)
MAX. REVERSE LEAKAGE
CURRENT (Note 4)
TYPE
NUMBER
(Note 1)
V
Z
@ I
ZT
(Note 2)
VOLTS
OHMS
SUFFIX
1N5518
1N5519
1N5520
1N5521
1N5522
4.7
10
22
2.0
1.5
1N5523
1N5524
1N5525
1N5526
1N5527
7.5
1.0
35
0.5
6.0
1N5528
1N5529
1N5530
1N5531
1N5532
12.0
1.0
90
0.05
9.5
1N5533
1N5534
1N5535
1N5536
1N5537
17.0
1.0
100
0.01
14.0
1N5538
1N5539
1N5540
1N5541
1N5542
24.0
1.0
100
0.01
20.0
1N5543
1N5544
1N5545
1N5546
33.0
1.0
100
0.01
28.0
NOTES:
1.
TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers shown are +/-20% with guaranteed limits for only V
Z
, I
R
, and V
F
. Units with A suffix are +/-10% with
guaranteed limits for V
Z
, I
R
, and V
F
. Units with guaranteed limits for all six parameters are indicated by a B suffix for +/-5.0% units,
C suffix for +/-2.0% and D suffix for +/-1.0%.
2.
ZENER VOLTAGE (V
Z
) MEASUREMENT –
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25
o
C.
3.
ZENER IMPEDANCE (Z
Z
) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (I
ZT
) is superimposed on I
ZT
.
4.
REVERSE LEAKAGE CURRENT (I
R
) –
Reverse leakage currents are guaranteed and are measured at V
R
as shown on the table.
5.
MAXIMUM REGULATOR CURRENT (I
ZM
) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6.
MAXIMUM REGULATION FACTOR (
V
Z
) –
V
Z
is the maximum difference between V
Z
at I
ZT
and V
Z
at I
ZL
measured with the device junction in thermal equilibrium.
V
R
– VOLTS
JEDEC
NOMINAL
ZENER
VOLTAGE
TEST
CURRENT
I
ZT
mAdc
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
Z
ZT
@ I
ZT
(Note 3)
I
R
μ
Adc
NON & A-
B-C-D
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
I
ZM
(Note 5)
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT I
Z
= 250
μ
A
N
D
μ
V/
√
Hz
REGULATION
FACTOR
V
Z
(Note 6)
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
LOW V
CURRENT
I
ZL
(Note 6)
mAdc
3.3
3.6
3.9
4.3
20
20
20
20
26
24
22
18
5.0
3.0
1.0
3.0
0.90
0.90
0.90
1.0
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
5.1
5.6
6.2
6.8
5.0
3.0
1.0
1.0
26
30
30
30
2.0
2.0
1.0
1.0
2.0
3.0
4.5
5.5
8.2
9.1
10.0
11.0
1.0
1.0
1.0
1.0
40
45
60
80
0.5
0.1
0.05
0.05
6.5
7.0
8.0
9.0
13.0
14.0
15.0
16.0
1.0
1.0
1.0
1.0
90
100
100
100
0.01
0.01
0.01
0.01
10.5
11.5
12.5
13.0
18.0
19.0
20.0
22.0
1.0
1.0
1.0
1.0
100
100
100
100
0.01
0.01
0.01
0.01
15.0
16.0
17.0
18.0
25.0
28.0
30.0
1.0
1.0
1.0
100
100
100
0.01
0.01
0.01
21.0
23.0
24.0
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
11-12-2003 REV B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5535 | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
| 1N5536 | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
| 1N5537 | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
| 1N5538 | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
| 1N5539 | Low Voltage Avalanche 500 mW Zener Diodes DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5534-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5534A | 制造商:JGD 制造商全稱:Jinan Gude Electronic Device 功能描述:0.4W LOW VOLTAGE AVALANCHE DIODES |
| 1N5534A-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
| 1N5534ATR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Low Voltage Surface Mount 500 mW Avalanche Diodes |
| 1N5534AUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LEADLESS PACKAGE FOR SURFACE MOUNT ZENER DIODE, 500mW |
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