- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366159 > 1N5348D (MICROSEMI CORP) surface mount silicon Zener diodes PDF資料下載
參數(shù)資料
| 型號： | 1N5348D |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 11 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | PLASTIC, T-18, 2 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 1N5348D |
1N5333B through 1N5388B
Motorola TVS/Zener Device Data
6-5
5 Watt Surmetic 40 Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
I
VZ, ZENER VOLTAGE (VOLTS)
1000
100
10
1
0.1
10
20
30
40
50
60
70
80
100
10
1
0.1
80
100
120
140
160
180
200
220
VZ, ZENER VOLTAGE (VOLTS)
I
T = 25
°
C
Figure 9. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
Figure 10. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL =
θ
LA PD + TA
θ
LA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL +
TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 5 for dc power.
TJL =
θ
JL PD
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (
TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V =
θ
VZ
TJ
θ
VZ, the zener voltage temperature coefficient, is found from
Figures 2 and 3.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 4 should not be used to compute surge capa-
bility. Surge limitations are given in Figure 6. They are lower
than would be expected by considering only junction tempera-
ture, as current crowding effects cause temperatures to be ex-
tremely high in small spots resulting in device degradation
should the limits of Figure 6 be exceeded.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5348DTR | surface mount silicon Zener diodes |
| 1N5348TR | surface mount silicon Zener diodes |
| 1N5348 | surface mount silicon Zener diodes |
| 1N5348A | TRANSISTOR, SILICON NPN, 30V, 1A, SOT-223 |
| 1N5348ATR | TRANS NPN 30V 7000MA SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5348D/TR8 | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE T-18 - Tape and Reel |
| 1N5348DTR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Silicon 5 Watt Zener Diodes |
| 1N5348E3/TR12 | 功能描述:DIODE ZENER 11V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:11V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 8V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:3,000 |
| 1N5348E3/TR13 | 功能描述:DIODE ZENER 11V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:11V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 8V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:1,250 |
| 1N5348E3/TR8 | 功能描述:DIODE ZENER 11V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:11V 容差:±20% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:2.5 歐姆 不同?Vr 時的電流 - 反向漏電流:5μA @ 8V 不同 If 時的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:1,000 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。