參數(shù)資料
型號(hào): 1N4937G-TB
廠商: Won-Top Electronics Co., Ltd.
英文描述: 1.0A GLASS PASSIVATED FAST RECOVERY DIODE
中文描述: 安培玻璃鈍化快恢復(fù)二極管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 56K
代理商: 1N4937G-TB
1N4933G – 1N4937G
1 of 4 2006 Won-Top Electronics
Pb
1N4933G – 1N4937G
1.0A GLASS PASSIVATED FAST RECOVERY DIODE
Features
!
Glass Passivated Die Construction
!
Low Forward Voltage Drop
!
High Current Capability A B A
!
High Reliability
!
High Surge Current Capability
Mechanical Data
C
!
Case: DO-41, Molded Plastic D
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
!
Polarity: Cathode Band
!
Weight: 0.34 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N4933G
1N4934G
1N4935G
1N4936G
1N4937G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
V
Average Rectified Output Current
(Note 1) @T
A
= 75°C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
30
A
Forward Voltage @I
F
= 1.0A
V
FM
1.2
V
Peak Reverse Current @T
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
I
RM
5.0
100
μA
Reverse Recovery Time (Note 2)
t
rr
200
nS
Typical Junction Capacitance (Note 3)
C
j
15
pF
Operating Temperature Range
T
j
-65 to +150
°C
Storage Temperature Range
T
STG
-65 to +150
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
WTE
POWER SEMICONDUCTORS
DO-41
Min
25.4
4.06
0.71
2.00
Dim
A
B
C
D
Max
5.21
0.864
2.72
All Dimensions in mm
相關(guān)PDF資料
PDF描述
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