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參數(shù)資料
| 型號(hào)： | 1N4936 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Axial-Lead Fast-Recovery Rectifier(400V峰值反向電壓快速恢復(fù)整流二極管) |
| 中文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | LEAD FREE, PLASTIC, CASE 59-10, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 1N4936 |
1N4933, 1N4934, 1N4935, 1N4936, 1N4937
http://onsemi.com
2
MAXIMUM RATINGS
(Note 1)
Rating
Symbol
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
V
NonRepetitive Peak Reverse Voltage
RMS Reverse Voltage
V
RSM
V
R(RMS)
75
35
150
70
250
140
450
280
650
420
V
Average Rectified Forward Current
(Single phase, resistive load, T
A
= 75
°
C) (Note 2)
I
O
1.0
A
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions)
I
FSM
30
A
Operating Junction Temperature Range
Storage Temperature Range
T
J
T
stg
65 to +150
65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient
(Typical Printed Circuit Board Mounting)
R
JA
65
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Instantaneous Forward Voltage
(I
F
= 3.14 Amp, T
J
= 150
°
C)
v
F
1.0
1.2
V
Forward Voltage
(I
F
= 1.0 Amp, T
A
= 25
°
C)
V
F
1.05
1.2
V
Reverse Current (Rated DC Voltage) T
A
= 25
°
C
T
A
= 100
°
C
I
R
1.0
50
5.0
100
A
REVERSE RECOVERY CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Recovery Time
(I
F
= 1.0 Amp to V
R
= 30 Vdc)
(I
FM
= 15 Amp, di/dt = 10 A/ s)
t
rr
150
175
200
300
ns
Reverse Recovery Current, (I
F
= 1.0 Amp to V
R
= 30 Vdc)
1. Ratings at 25
°
C ambient temperature unless otherwise specified.
2. Derate by 20% for capacitive loads.
Indicates JEDEC Registered Data for 1N4933 Series.
I
RM(REC)
1.0
2.0
A
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| 1N4936 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4936 BK | 功能描述:DIODE GEN PURP 400V 1A DO41 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):有效 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:400V 電流 - 平均整流（Io）:1A 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:200ns 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 400V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類(lèi)型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 工作溫度 - 結(jié):- 標(biāo)準(zhǔn)包裝:2,000 |
| 1N4936 TR | 功能描述:DIODE GEN PURP 400V 1A DO41 制造商:central semiconductor corp 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:400V 電流 - 平均整流（Io）:1A 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:200ns 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 400V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類(lèi)型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 工作溫度 - 結(jié):-65°C ~ 200°C 標(biāo)準(zhǔn)包裝:1 |
| 1N4936 | 制造商:Fairchild Semiconductor Corporation 功能描述:FAST RECOVERY POWER DIODE ROHS COMPLIANT 制造商:SPC Multicomp 功能描述:DIODE FAST RECOVERY 1A 400V |
| 1N4936/1 | 功能描述:整流器 Vr/400V Io/1A BULK RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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