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參數(shù)資料
| 型號： | 1N457A.T50A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | 1N457A.T50A |
1N457/A
1N457/A, Rev. A
1N457/A
Small Signal Diode
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
DO-35
Color Band Denotes Cathode
2002 Fairchild Semiconductor Corporation
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VRRM
Maximum Repetitive Reverse Voltage
70
V
IF(AV)
Average Rectified Forward Current
200
mA
I
FSM
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
1.0
4.0
A
T
stg
Storage Temperature Range
-65 to +200
°C
T
J
Operating Junction Temperature
175
°C
Symbol
Parameter
Value
Units
P
D
Power Dissipation
500
mW
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
Symbol
Parameter
Test Conditions
Min
Max
Units
VR
Breakdown Voltage
IR = 100 A
70
V
F
Forward Voltage
1N457
1N457A
I
F = 20 mA
IF = 100 mA
1.0
V
IR
Reverse Current
VR = 60 V
VR = 60 V, TA = 150°C
25
5
nA
A
CT
Total Capacitance
1N457
VR = 0, f = 1.0 MHz
8.0
pF
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