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參數(shù)資料
| 型號： | 1N4450 |
| 英文描述： | MC 1,5/ 6-STF-3,81 BK |
| 中文描述： | 硅平面二極管外延 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 1N4450 |
Notes:
(1) These diodes are also avaiable in glass case DO-34
(2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature
Parameters for diodes in case DO-34:
P
tot=300mW
T
S=-65 to +175
T
J=175
R
tha
0.4K/mW
Features
1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Silicon Epitaxial Planar Diodes
for general purpose and switching
The types 1N4149, 1N4447 and 1N4449 are also available
in glass case DO-34.
Electrical Characteristics
1
Type
Peak
reverse
voltage
Max.
aver.
rectified
current
Max.
power
dissip.
at 25
Max.
junction
temper-
ature
Max. forward
voltage drop
Max. reverse
current
Max. reverse recovery time
V
RM VIO mA
P
tot mW
T
j
V
F V
at
I
F mA
I
n nA
at
V
R V
t
rr nS
Conditions
1N914
100
75
500
200
1.0
10
25
20
Max. 4.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4149 1)
100
150
500
200
1.0
10
25
20
Max. 4.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4150
50
200
500
200
1.0
200
100
50
Max. 4.0 I
F=IR=10 to 200 mA, to 0.1 IF
1N4152
40
150
400
175
0.55
0.10
50
30
Max. 2.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4153
75
150
400
175
0.55
0.10
50
Max. 2.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4154
35
150 2)
500
200
1.0
0.10
100
25
Max. 2.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4447 1)
100
150
500
200
1.0
20
25
20
Max. 4.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4449 1)
100
150
500
200
1.0
30
25
20
Max. 4.0 I
F=10mA, VR=6V, RL=100
, to I
R=1mA
1N4450
40
150
400
175
0.54
0.50
50
30
Max. 4.0 I
F=IR=10mA, to IR=1mA
1N4451
40
150
400
175
0.50
0.10
50
30
Max. 10
I
F=IR=10mA, to IR=1mA
1N4453
30
150
400
175
0.55
0.01
50
20
-
1N4454
75
150
400
175
1.0
10
100
50
Max. 4.0 I
F=IR=10mA, to IR=1mA
DIM E NS IO NS
DIM
in c hes
m m
No te
Min .
Ma x .
Min .
Ma x .
A
-
0.154
-
3 .9
B
-
0.075
-
1 .9
C
-
0.020
-
0 .5 2
D
1 .083
-
27.50
-
DIM E N S IO NS
DIM
in c hes
m m
No te
Min .
Ma x .
Min .
Ma x .
A
-
0.1 1 4
-
2.9
B
-
0.075
-
1 .9
C
-
0.017
-
0 .4 2
D
0 .630
-
16.0
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4451 | SILICON EPITAXIAL PLANAR DIODES |
| 1N4453 | SILICON EPITAXIAL PLANAR DIODES |
| 1N4454UR-1 | SWITCHING DIODE |
| 1N4454 | SWITCHING DIODE |
| 1N4460US | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4451 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:silicon diode |
| 1N4452 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:silicon diode |
| 1N4453 | 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:SILICON EPITAXIAL PLANAR DIODES |
| 1N4454 | 功能描述:整流器 Vr/75V Io/200mA BULK RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4454 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
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