參數(shù)資料
型號: 1N4148L-CA2-R
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 0.2 A, 100 V, SILICON, SIGNAL DIODE
封裝: LEAD FREE, PLASTIC PACKAGE-2
文件頁數(shù): 2/4頁
文件大?。?/td> 212K
代理商: 1N4148L-CA2-R
1N4148
DIODE
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R601-001,I
ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Maximum Repetitive Reverse Voltage
VRRM
100
V
Average Rectified Forward Current
IF (AV)
200
mA
Pulse Width = 1.0 second
1.0
A
Non-repetitive Peak
Forward Surge Current
Pulse Width = 1.0 microsecond
IFSM
4.0
A
Power Dissipation
PD
500
mW
Operating Junction Temperature
TJ
+175
°C
Storage Temperature Range
TSTG
-65 ~ +200
°C
Note: 1. These ratings are based on a maximum junction temperature of 200°C.
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
300
/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
IR = 100μA
100
V
Breakdown Voltage
VR
IR = 5.0μA
75
V
Forward Voltage
VF
IF = 10 mA
1.0
V
VR = 20 V
25
nA
Reverse Current
IR
VR = 75 V
5.0
μA
Total Capacitance
CT
VR = 0, f =1.0MHz
4.0
pF
Reverse Recovery Time
tRR
IF = 10 mA, VR = 6.0 V (60mA)
IRR = 1.0 mA, RL = 100
4.0
ns
相關(guān)PDF資料
PDF描述
1N4148T-12 0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
1N4150T-88 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
1N4153T-15A 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
1N4153T-73 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
1N4153T-87Y 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
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