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參數(shù)資料
| 型號(hào)： | 1N4004GP/66 |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封裝： | PLASTIC, DO-41, 2 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 102K |
| 代理商： | 1N4004GP/66 |
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Document Number: 88504
Revision: 02-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
Figure 3. Typical Instantaneous Forward Characteristics
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
0.375" (9.5 mm)
Lead Length
60 Hz
Resistive or
Inductive Load
Ambient Temperature (°C)
A
v
er
age
F
o
rw
ard
Rectified
C
u
rrent
(A)
5
10
1
100
10
15
20
25
30
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
Figure 4. Typical Reverse Characteristics
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
0
0.01
0.1
1
10
60
80
100
20
40
T
J = 100 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(
A)
0.1
10
1
100
1
10
100
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
10
1
100
0.1
10
100
1
T
ransient
Ther
mal
Impedance
(°C/
W
)
t - Pulse Duration (s)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4005GP/73 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4005GPE/4E | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4005GPE/100 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4007GPE/70 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL |
| 1N4005 | 1 A, SILICON, SIGNAL DIODE, DO-41 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4004GPE/16 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4004GPE/20 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4004GPE/23 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4004GPE/4 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4004GPE/41 | 功能描述:整流器 Vr/400V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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