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參數(shù)資料
| 型號(hào)： | 1N4004 |
| 廠商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 65K |
| 代理商： | 1N4004 |
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
VRMS
VDC
VRRM
I(AV)
1N4001 thru 1N4007
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
1N4003
200
140
200
1N4001
50
35
50
1N4007
1000
700
1000
1N4002
100
70
100
1N4006
800
560
800
1N4005
600
420
600
1N4004
400
280
400
Maximum Average Forward
Rectified Current
@TA
=75 C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
1.0
TJ
Operating Temperature Range
-55 to +125
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 2)
R0JA
26
C/W
CJ
Typical Junction
Capacitance (Note 1)
15
pF
IR
@TJ=100 C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25 C
5
50
uA
VF
Maximum forward Voltage at 1.0A DC
1.0
V
IFSM
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
30
A
V
UNIT
V
All Dimensions in millimeter
Max.
Min.
DO-41
Dim.
A
D
C
B
25.4
5.20
-
4.10
0.71
2.00
2.70
0.86
DO-41
A
C
D
A
B
CHARACTERISTICS
SYMBOL
REVERSE VOLTAGE - 50 to 1000 Volts
FORWARD CURRENT - 1.0 Ampere
SEMICONDUCTOR
LITE-ON
REV. 3, Mar-2009, KDAC01
3.7
A S
2
I t
2
I t Rating for fusing (t < 8.3ms)
2
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| 1N4004AT-20A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4004AT-20 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4004AT-22Y | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
| 1SR35-400AT-20A | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4004- | 制造商:TAIW 功能描述:General Purpose 400V Through Hole Rectifier DO-41 1.0A |
| 1N4004 (MC) | 制造商:SPC Multicomp 功能描述:DIODE 1A 400V |
| 1N4004 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4004 BK | 功能描述:DIODE GEN PURP 200V 1A DO41 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):生命周期結(jié)束 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:200V 電流 - 平均整流（Io）:1A 不同 If 時(shí)的電壓 - 正向（Vf）:1.1V @ 1A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間（trr）:- 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 200V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-41 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:2,000 |
| 1N4004 BULK | 制造商:ROHM 功能描述:General Purpose 400V Through Hole Rectifier DO-41 40A |
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