參數資料
型號: 1MB08-120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: 33UH 3A 0.066 OHM INDUCTOR DO5022P-333 SMD
中文描述: 13 A, 1200 V, N-CHANNEL IGBT, TO-3P
封裝: TO-3P, 3 PIN
文件頁數: 2/5頁
文件大小: 279K
代理商: 1MB08-120
0
1
2
3
4
5
6
0
5
10
15
20
25
12V
8V
10V
V
GE
=20V, 15V
Collector Current vs. Collector-Emitter Voltage
T
j
=25°C
C
C
Collector-Emitter Voltage : V
CE
[V]
0
1
2
3
4
5
6
0
5
10
15
20
25
12V
8V
10V
V
GE
=20V, 15V
Collector Current vs. Collector-Emitter Voltage
T
j
=125°C
C
C
Collector-Emitter Voltage : V
CE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
12
I
C
=
16A
8A
4A
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
=25°C
C
C
Gate-Emitter Voltage : V
GE
[V]
0
5
10
15
20
25
0
2
4
6
8
10
12
I
C
=
16A
4A
8A
Collector-Emitter Voltage vs. Gate-Emitter Voltage
T
j
=125°C
C
C
Gate-Emitter Voltage : V
GE
[V]
0
2
4
6
8
10
12
14
10
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. Collector Current
V
CC
=600V, R
G
=20
, V
GE
=±15V, T
j
=25°C
S
o
,
r
,
o
,
f
Collector Current : I
C
[A]
0
2
4
6
8
10
12
14
100
1000
t
f
t
r
t
off
t
on
Switching Time vs. Collector Current
V
CC
=600V, R
G
=20
, V
GE
=±15V, T
j
=125°C
S
o
,
r
,
o
,
f
Collector Current : I
C
[A]
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