參數(shù)資料
型號： 1M0880
廠商： Fairchild Semiconductor Corporation
英文描述： Fairchild Power Switch(FPS)
中文描述： 飛兆半導體功率開關（FPS）
文件頁數(shù)： 3/10頁
文件大?。?/td> 111K
代理商： 1M0880
KA1L0880B/KA1M0880B
3
Electrical Characteristics (SFET part)
(Ta=25
°
C unless otherwise specified)
Note:
Pulse test: Pulse width
≤
300
μ
S, duty cycle
≤
2%
S
R
Parameter
Symbol
BV
DSS
Condition
Min.
800
Typ.
-
Max.
-
Unit
V
Drain source breakdown voltage
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=5.0A
V
DS
=15V, I
D
=5.0A
Zero gate voltage drain current
I
DSS
-
-
50
μ
A
-
-
200
μ
A
Static drain source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
1.2
2.5
2460
210
64
-
95
150
60
1.5
-
-
-
-
90
200
450
150
S
1.5
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=8.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=8.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
nS
Qg
-
-
150
nC
Qgs
-
20
-
Gate drain (Miller) charge
Qgd
-
70
-
1
---
=
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參數(shù)描述
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