參數(shù)資料
型號(hào)： 1M0365R
廠商： Fairchild Semiconductor Corporation
英文描述： Fairchild Power Switch(FPS)
中文描述： 飛兆半導(dǎo)體功率開(kāi)關(guān)（FPS）
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 89K
代理商： 1M0365R
KA1L0365R/KA1M0365R/KA1H0365R
3
Electrical Characteristics (SFET part)
(Ta=25
°
C unless otherwise specified)
Note:
1. Pulse test: Pulse width
≤
300
μ
S, duty cycle
≤
2%
2.
S
R
Parameter
Drain-Source Breakdown Voltage
Symbol
BV
DSS
Condition
Min.
650
Typ.
-
Max.
-
Unit
V
V
GS
=0V, I
D
=50
μ
A
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125
°
C
V
GS
=10V, I
D
=1.5A
V
DS
=50V, I
D
=1.5A
Zero Gate Voltage Drain Current
I
DSS
-
-
50
μ
A
-
-
200
μ
A
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
-
3.6
-
720
40
40
150
100
150
42
4.5
-
-
-
-
-
-
-
-
S
2.0
-
-
-
-
-
-
-
V
GS
=0V, V
DS
=25V,
f=1MHz
pF
V
DD
=0.5BV
DSS
, I
D
=3.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=3.0A,
V
DS
=0.5BV
DSS
(MOSFET
switching time are
essentially independent of
operating temperature)
nS
Qg
-
-
34
nC
Qgs
-
7.3
-
Gate-Drain (Miller) Charge
Qgd
-
13.3
-
1
---
=
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參數(shù)描述
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