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參數(shù)資料
| 型號(hào)： | 181T2 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | NPN SILICON TRANSISTORS, DIFFUSED MESA |
| 中文描述： | NPN硅晶體管，漫射梅薩 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 168K |
| 代理商： | 181T2 |
COMSET SEMICONDUCTORS
2/4
BDY23, 180 T2
BDY24, 181 T2
BDY25, 182 T2
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R
thJ-C
Thermal Resistance, Junction to Case
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
2
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
BDY23, 180T2
60
-
-
BDY24, 181T2
90
-
-
V
CEO(BR)
Collector-Emitter
Breakdown Voltage (*)
I
C
=50 mA, I
B
=0
BDY25, 182T2
140
-
-
V
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
BDY23
BDY24
BDY25
60
100
200
-
-
-
-
-
-
-
-
V
(BR)CBO
Collector-Base Breakdown
Voltage (*)
I
C
=3 mA
-
-
-
-
V
V
CE
=60 V
V
CE
=90 V
V
CE
=140 V
I
CEO
Collector-Emitter Cutoff
Current
1.0
mA
I
EBO
Emitter-Base Cutoff Current
V
EB
=10 V
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
1.0
mA
V
CE
=60 V
V
BE
=0 V
BDY23, 180T2
-
-
0.5
V
CE
=100 V
V
BE
=0 V
BDY24, 181T2
-
-
1.0
I
CES
Collector-Emitter Cutoff
Current
V
CE
=180 V
V
BE
=0 V
BDY25, 182T2
-
-
1.0
mA
BDY23, 180T2
BDY24, 181T2
BDY25, 182T2
-
-
-
-
-
-
1
0.6
0.6
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
=2.0 A, I
B
=0.25 A
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 181T2A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-3 |
| 181T2B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-3 |
| 181T2C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-3 |
| 181UF09P.35.02 | 制造商:General Cable Technologies Corporation 功能描述: |
| 181UF09P.38.02 | 制造商:General Cable Technologies Corporation 功能描述: |
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