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參數(shù)資料
| 型號： | 181RKISERIES |
| 廠商： | International Rectifier |
| 英文描述： | PHASE CONTROL THYRISTORS 180A |
| 中文描述： | 相位控制晶閘管180A |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 224K |
| 代理商： | 181RKISERIES |
181RKI Series
12
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
V
RSM
, maximum non-
repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
Type number
40
181RKI
80
800
900
30
100
1000
1100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
180
A
180° conduction, half sine wave
@ Case temperature
80
°C
I
T(RMS)
I
TSM
Max. RMS on-state current
285
DC @ 79°C case temperature
Max. peak, one-cycle
3800
t = 10ms
No voltage
non-repetitive surge current
4000
A
t = 8.3ms
reapplied
3500
t = 10ms
100% V
RRM
reapplied
3660
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
72
t = 10ms
No voltage
Initial T
J
= T
J
max.
66
t = 8.3ms
reapplied
61
t = 10ms
100% V
RRM
56
t = 8.3ms
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
720
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.35
V
I
pk
= 570A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.83
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.92
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.81
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
181RKI
Units Conditions
0.89
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80%
V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 50A, T
J
= T
J
max, di/dt
= 10A/μs, V
R
= 100V
dv/dt
= 20V/μs
Parameter
181RKI
Units Conditions
t
d
Typical delay time
1.0
Switching
t
q
Typical turn-off time
100
μs
300
A/μs
To Order
Next Data Sheet
Index
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