參數(shù)資料
型號(hào): 160MT80KB
元件分類: 橋式整流
英文描述: 3 PHASE, 160 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
封裝: INT-A-PAK-6
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 94K
代理商: 160MT80KB
130-160MT..KB Series
Bulletin I27502 rev. A 05/03
www.irf.com
5
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 6 - Current Ratings Characteristics
1
10
100
1000
01
2
3
4
5
T= 25°C
J
In
s
tan
e
o
u
s
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
Instantaneous Forward Voltage (V)
160MT..KB Series
Per Junction
T = 150°C
J
50
60
70
80
90
100
110
120
130
140
150
0
40
80
120
160
200
240
M
a
x
im
u
m
A
llo
wa
bl
e
C
as
e
T
em
per
a
tu
re
C)
Total Output Current (A)
120°
(Rect)
160MT..KB Series
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
R
=
0.0
5
K
/W
-
D
elt
a
R
th
S
A
0.1
2
K/W
0.2
K/W
0.3
K/W
0.5
K/W
0.7 K
/W
1.5 K/W
0
50
100
150
200
250
300
350
400
450
500
0
20406080
100 120 140 160
Total Output Current (A)
Ma
x
im
u
m
T
ot
a
l
P
o
w
e
r
L
os
s
(W
)
120°
(Rect)
130MT..KB Series
T= 150°C
J
200
300
400
500
600
700
800
900
1000
110
100
Pea
k
H
a
lf
Si
n
e
W
a
v
e
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Initial T = 150°C
@ 60Hz 0.0083s
@ 50Hz 0.0100s
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
130MT..KB Series
200
300
400
500
600
700
800
900
1000
1100
1200
0.01
0.1
1
P
e
a
k
H
a
lf
S
in
e
W
a
v
e
F
o
rw
a
rd
C
u
rre
n
t
(A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
130MT..KB Series
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
RRM
Versus Pulse Train Duration.
J
相關(guān)PDF資料
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1N827A133 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34
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1N751AT26R 5.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N962B 11 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
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