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參數(shù)資料
| 型號(hào)： | 1530-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| 中文描述： | 射頻 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 1530-1 |
AVIONICS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.280 4LSL (M115)
epoxy sealed
.
DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.
40 WATTS (typ.) IFF 1030 - 1090 MHz
.
35 WATTS (min.) DME 1025 - 1150 MHz
.
25 WATTS (typ.) TACAN 960 - 1215 MHz
.
9.0 dB MIN. GAIN
.
REFRACTORY GOLD METALLIZATION
.
EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.
INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.
INPUT MATCHED, COMMON BASE
CONFIGURATION
DESCRIPTION
The SD1530-01 is a gold metallized silicon, NPN
power transistor designed for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-01 is pack-
aged in the .280” input matched stripline package
resulting in improved broadband performance and
a low thermal resistance.
PIN CONNECTION
BRANDING
1530-1
ORDER CODE
SD1530-01
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
65
65
3.5
V
V
V
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
2.6
87.5
+200
A
W
°
C
°
C
65 to +150
R
TH(j-c)
Junction-Case Thermal Resistance
2.0
°
C/W
SD1530-01
1. Collector
2. Base
3. Emitter
4. Base
THERMAL DATA
October 11, 1993
rev. 1 1/3
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