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參數(shù)資料
| 型號： | 152K400AM |
| 元件分類： | 整流器 |
| 英文描述： | 150 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA |
| 封裝： | DO-8, 1 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 152K400AM |
45L(R), 150K/ L/ KS(R) Series
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number**
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= 175°C
VV
mA
5
50
100
35
10
100
200
35
20
200
300
35
30
300
400
35
40
400
500
35
60
600
720
35
80
800
960
32
100
1000
1200
24
ELECTRICAL SPECIFICATIONS
Voltage Ratings
45L(R) *
150K(R)
150L(R)
150KS(R)
* 45L 50V and 300V V
RRM classes are not available.
**Also available as JEDEC series 1N3288A through 1N3296A (DO-8 case style) and 1N3111 through 1N3092 (DO-30 case style)
Forward Conduction
I
F(AV)
Max. average forward current
150
A
180° conduction, half sine wave
@ Case temperature
150
°C
I
F(RMS)
Max. RMS forward current
235
A
DC @ 142°C case temperature
I
FSM
Max. peak, one-cycle forward,
3570
t = 10ms
No voltage
non-repetitive surge current
3740
t = 8.3ms
reapplied
3000
t = 10ms
100% V
RRM
3140
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
64
t = 10ms
No voltage
Initial T
J
= T
J
max.
58
t = 8.3ms
reapplied
45
t = 10ms
100% V
RRM
41
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
640
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.33
V
I
pk
= 471A, T
J
= 25°C, t
p
= 10ms sinusoidal wave
Parameter
45L /150...
Units
Conditions
KA2s
A
V
m
0.67
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
0.83
(I > x
π x I
F(AV)
),T
J
= T
J
max.
1.42
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
0.91
(I > x
π x I
F(AV)
),T
J
= T
J
max.
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| 150KSR1000 | 150 A, 1000 V, SILICON, RECTIFIER DIODE |
| 150KSR200 | 150 A, 200 V, SILICON, RECTIFIER DIODE |
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