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| 型號： | 11RG1 |
| 英文描述： | Infrared Emitting Diodes (IRED) |
| 中文描述： | 紅外發(fā)光二極管（登記合格決定） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 11RG1 |
GaAs SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
Description
Package Dimensions
The MIE-11RG1 is a GaAs infrared emitting diode
molded in red transparent, lensed side looking package .
The MIE-11RG1 provides a broad range of intensity
selection .
Features
l
Selected to specific on-line intensity and
radiant intensity ranges
l
Low cost, plastic side looking package
l
Mechanically and spectrally matched to
the MID-11422 of phototransistor .
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Maximum Rating
Unit
Power Dissipation
75
mW
Peak Forward Current
1
A
Continuos Forward Current
50
mA
Reverse Voltage
5
V
Operating Temperature Range
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Storage Temperature Range
Lead Soldering Temperature
02/04/2002
Unity Opto Technology Co., Ltd.
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Lead spacing is measured where the leads emerge from the package.
2.54 NOM.
(.100)
0.76±0.1
(.030±.004)
1.55±.02
(.061±.007)
4.45±0.2
(.175±.007)
((.087)
2.22
C
A
C
1.00 MIN.
(.039)
0.50 TYP.
(.020)
Unit: mm ( inches )
SEE NOTE 3
4.50±0.10
(.177±.004)
5.72±0.2
(.225±.007)
12.70 MIN.
(.500)
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