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參數(shù)資料
| 型號： | 10D561K |
| 廠商： | CERAMATE TECHNOLOGY CO., LTD. |
| 英文描述： | Flash Memory IC |
| 中文描述： | 壓敏電阻 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 10D561K |
TYPE
GNR10D
□□□
K
MODEL
PAGE
Oct. 13, 2001
B01
4/
5
CITATION
DATE
SUBJECT
ELECTRICAL CHARACTERISTICS
REV.
4. ELECTRICAL CHARACTERISTICS
N0.
ITEM
PERFORMANCE
TEST METHODS
4.0
Standard Conditions
Unless otherwise specified, all tests are made
under environmental conditions as given below:
Temperature: 5
35
℃
Relative humidity: 45
85 % RH
Maximum continuous sine wave(RMS) or DC
voltage which may be applied.
Voltage across the varistor measured at C
mA
DC.
4.1
Maximum Allowable
Voltage
Varistor Voltage
Varistor Voltage
Temperature
Coefficient
Max. Clamping
Voltage
AC :
DC :
V
1mA
:
＊
(2)
Vrms
＊
(2)
V
(2)
V
4.2
＊
4.3
0
0.05 %/
℃
V
CmA
at 85
℃
－
V
CmA
at 25
℃
1
V
CmA
at 25
℃
60
4.4
＊
(2)
V
at
＊
(2)
APeak voltage across the varistor with a specified
peak impulse current of 8
×
20
μ
s waveform.
Maximum 50
60Hz power which may be
loaded for 1,000 hrs at 85
±
2
℃
with
△
V
CmA
/ V
CmA
≦±
10%.
The max. current within the varistor voltage
change of less than
±
10% when one impulse
current (8
×
20
μ
s) applied.
(2)
A
The max. current with a varistor voltage change
of less than
±
10% when two times impulse
current (8
×
20
μ
s) are applied at intervals of 5
minutes.
The max. energy absorbed with a varistor voltage
change of less than
±
10% when one impulse(10
×
1000
μ
s) is applied.
The max. current with a varistor voltage change
of less than
±
10% when 10,000 times impulse
current (8
×
20
μ
s) are applied at intervals of 20
seconds at room temperature.
4.5
Rated Power
＊
(2)
W
4.6
Withstanding Surge
Current
＊
4.7
Energy
＊
(2)
Joule
4.8
Surge Life
＊
(2)
A
＊
(2) See Page 5
×
100
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|---|---|
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