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參數(shù)資料
| 型號(hào)： | 1.5KE400E3/64 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 1.5KE, 2 PIN |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 170K |
| 代理商： | 1.5KE400E3/64 |
www.vishay.com
4
Document Number 88301
03-Mar-05
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay Semiconductors
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Application
This series of Silicon Transient Suppressors is
used in applications where large voltage tran-
sients can permanently damage voltage-sensitive
components.
The TVS diode can be used in applications where
induced lightning on rural or remote transmission
lines presents a hazard to electronic circuitry (ref:
R.E.A. specification P.E. 60).
This Transient Voltage Suppressor diode has a
pulse power rating of 1500 watts for one millisec-
ond. The response time of TVS diode clamping
action is effectively instantaneous (1 x 10-9 sec-
onds bidirectional); therefore, they can protect
integrated circuits, MOS devices, hybrids, and
other voltage sensitive semiconductors and com-
ponents. TVS diodes can also be used in series or
parallel to increase the peak power ratings.
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter
Symbol
Limit
Unit
Typical thermal resistance junction-to-lead
RθJL
20
°C/W
Typical thermal resistance junction-to-ambient
RθJA
75
°C/W
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
0.1
1
10
100
0.1
s
1.0
s10s
td — Pulse Width (sec.)
100
s
1.0ms
10ms
0
50
100
150
200
0
25
50
75
100
25
75
125
175
Peak
Pulse
Power
(P
PP
)
o
r
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (
°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I RSM
TJ =25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
tr=10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
5
10
100
500
10
100
1000
10000
C
J,
Capacitance,
pF
V(BR), Breakdown Voltage (V)
Unidirectional
Bidirectional
VR = Rated
Stand-off Voltage
VR =0
f=1MHz
Vsig = 50 m Vp-p
TJ =25
°C
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