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參數(shù)資料
| 型號(hào)： | 1.5KE10 |
| 廠商： | GE Security, Inc. |
| 英文描述： | TransZorb Transient Voltage Suppressor(TransZorb瞬變電壓抑制器) |
| 中文描述： | TransZorb瞬態(tài)電壓抑制器（TransZorb瞬變電壓抑制器） |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 1.5KE10 |
0
1.0
2.0
3.0
4.0
0
100
150
50
0.1
μ
s
1.0
μ
s
10
μ
s
td, PULSE WIDTH, sec.
100
μ
s
1.0ms
10ms
0.1
1.0
10
100
0
50
100
150
200
0
25
50
75
100
25
75
125
175
5
10
100
500
10
100
1,000
10,000
1
10
100
10
100
200
0
25
50
T
L,
LEAD TEMPERATURE,°C
75
100
125
150
175
200
0
1.0
2.0
3.0
5.0
4.0
6.0
8.0
7.0
RATINGS AND CHARACTERISTIC CURVES 1.5KE6.8 THRU 1.5KE440CA
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
P
,
T
A
, AMBIENT TEMPERATURE, °C
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
FIG. 3 - PULSE WAVEFORM
t, TIME,ms
V
(BR)
, BREAKDOWN VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60 H
Z
I
P
P
P
)
P
)
D
C
J
,
P
A
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
A
=25°C
PULSE WIDTH (td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% of I
PP
tr=10
μ
sec.
UNIDIRECTIONAL
BIDIRECTIONAL
V
R
=0
V
R
=RATED
STAND-OFF
VOLTAGE
f=1 MHz
Vsig=50mV
P-P
T
J
=25
°
C
1.6 x 1.6 x 0.040"
(40 x 40 x 1mm.)
COPPER HEAT SINKS
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T
J
=T
J
max.
td
HALF VALUE - I
PP
2
10/1000
μ
sec. WAVEFORM
as DEFINED by R.E.A.
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT UNI-DIRECTIONAL ONLY
PEAK VALUE
I
PPM
FIG. 5 - STEADY STATE POWER DERATING CURVE
P
(
W
FIG. 2 - PULSE DERATING CURVE
= 0.375” (9.5mm)
LEAD LENGTHS
L
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 15KE100 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:TRANSIENT ABSORPTION ZENER |
| 15KE100A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:GPP TRANSIENT VOLTAGE SUPPRESSOR |
| 15KE100C | 制造商:ONS 功能描述:ON SEMICONDUCTOR S7D9A |
| 15KE100CA | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:1500W TRANSIENT VOLTAGE SUPPRESSOR |
| 15KE10A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:GPP TRANSIENT VOLTAGE SUPPRESSOR |
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