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參數(shù)資料
| 型號： | 08FDZ-BT(S)(LF)(SN) |
| 廠商： | J S T MFG CO LTD |
| 元件分類： | SMT連接器& FFC/FPC |
| 英文描述： | 8 CONTACT(S), FEMALE, STRAIGHT FFC/FPC CONNECTOR, SOLDER |
| 封裝： | ROHS COMPLIANT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 120K |
| 代理商： | 08FDZ-BT(S)(LF)(SN) |
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SILICON TRANSISTOR
2SA812A
PNP SILICON EPITAXIAL TRANSISTOR
MINI MOLD
DATA SHEET
Document No. D17840EJ2V0DS00 (2nd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
c
2005
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
PACKAGE DRAWING
(Unit: mm)
FEATURES
Complementary to 2SC1623A
High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0
mA)
High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cut-off Current
ICBO
0.1
μA
VCB =
60 V, IE = 0 A
Emitter Cut-off Current
IEBO
0.1
μA
VEB =
5.0 V, IC = 0 A
DC Current Gain
hFE
90
200
600
VCE =
6.0 V, IC = 1.0 mA
Note
Collector Saturation Voltage
VCE(sat)
0.18
0.3
V
IC =
100 mA, IB = 10 mA
Base to Emitter Voltage
VBE
0.58
0.62
0.68
V
VCE = 6.0 V, IC =
1.0 mA
Gain Bandwidth Product
fT
180
MHz
VCE =
6.0 V, IE = 10 mA
Output Capacitance
Cob
4.5
pF
VCB =
10 V, IE = 0 A, f = 1.0 MHz
Note Pulsed: PW
≤ 350
μs, Duty Cycle ≤ 2%
hFE CLASSIFICATION
Marking
M4
M5
M6
M7
hFE
90 to 180
135 to 270
200 to 400
300 to 600
1. Emitter
2. Base
3. Collector
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