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參數(shù)資料
| 型號： | 08F1917 |
| 英文描述： | TRANSISTOR MOSFET TO-247 |
| 中文描述： | 晶體管場效應(yīng)管，247 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 188K |
| 代理商： | 08F1917 |
MTW16N40E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
TJ = 25°C
04
8
12
16
20
25
30
15
2
6
10
14
18
5
7 V
6 V
VGS = 10 V
VDS = 50 V
04
6
28
25
35
40
20
30
10
0
TJ = –55°C
25
°C
100
°C
5
15
TJ = 25°C
VGS = 10 V
15 V
0.20
0.32
0.24
08
32
428
VGS = 0 V
0
200
400
100
300
350
1.0
50
TJ = 125°C
0
5
15
25
0
0.45
0.75
0.6
0.3
0.15
10
20
30
TJ = 100°C
25
°C
–55
°C
VGS = 10 V
–50
0
0.5
1.0
2.0
3.0
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 8 A
4.5 V
20
10
1000
0.26
0.28
0.30
0.22
12
20
16
24
2.5
1.5
0
100
°C
6.5 V
8 V
250
150
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