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參數(shù)資料
| 型號(hào)： | 08F1644 |
| 英文描述： | TRANSISTOR MOSFET D-PAK |
| 中文描述： | 晶體管MOSFET的的D - Pak |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 252K |
| 代理商： | 08F1644 |
MTD5N25E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
0.05
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
0.1
1.0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1
100
A
V
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0
25
50
75
100
125
40
ID = 5 A
10
150
20
80
60
120
1000
VGS = 20 V
SINGLE PULSE
TC = 25°C
10
s
100
s
1 ms
10 ms
dc
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.1
0.02
0.01
SINGLE PULSE
D = 0.5
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
10
1.0
t, TIME (s)
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