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參數(shù)資料
| 型號(hào)： | 0770_XP152A01D8MR |
| 廠商： | TOREX SEMICONDUCTOR LTD. |
| 英文描述： | Power MOS FET |
| 中文描述： | 功率MOS場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 156K |
| 代理商： | 0770_XP152A01D8MR |
835
11
DC Characteristics
Ta=25
:
PARAMETER
UNITS
Gate-Source Cut-off Voltage
Vgs(off)
-0.5
V
0.8
0.6
Id=-0.3A, Vgs=-2.5V
Gate-Source Leakage Current
Igss
A
±10
Forward Transfer Admittance
(note)
1S
Body Drain Diode
Forward Voltage
-0.8
-1.1
V
Drain Cut-off Current
Idss
-10
A
Vf
Vds=-20V, Vgs=0V
Id=-1mA, Vds=-10V
Id=-0.3A, Vds=-10V
If=-0.5A, Vgs=0V
Vgs=
±12V, Vds=0V
Drain-Source On-state
Resistance (note)
Rds(on)
Id=-0.3A, Vgs=-4.5V
0.36
0.48
SYMBOL
CONDITIONS
MAX
MIN
TYP
PARAMETER
UNITS
Feedback Capacitance
Crss
pF
Output Capacitance
Coss
pF
Input Capacitance
Ciss
35
100
180
pF
Vds=-10V, Vgs=0V
f=1MHz
SYMBOL
CONDITIONS
MAX
MIN
TYP
Dynamic Characteristics
Ta=25
:
Effective during pulse test.
Note:
Yfs
PARAMETER
UNITS
Fall Time
tf
ns
Rise Time
tr
ns
Turn-on Delay Time
td (on)
70
Turn-off Delay Time
td (off)
ns
30
15
10ns
Vgs=-5V, Id=-0.3A
Vdd=-10V
SYMBOL
CONDITIONS
MAX
MIN
TYP
Switching Characteristics
Ta=25
:
PARAMETER
UNITS
Rth (ch-a)
Thermal Resistance
(channel-ambience)
250
:/W
Implement on a ceramic PCB
SYMBOL
CONDITIONS
MAX
MIN
TYP
Thermal Characteristics
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