參數(shù)資料
型號: 0603YC103KAT
廠商: TriQuint Semiconductor,Inc.
英文描述: PT06E SERIES (MS3116) ENVIRONMENTAL-RESISTANT STRAIGHT PLUGS, STRAIGHT BODY STYLE, SOLDER TERMINATION, 8 SHELL SIZE, 8-4 INSERT ARRANGEMENT, PLUG GENDER, 4 CONTACTS
中文描述: 9.9 - 11.2Gb / s光調(diào)制器驅(qū)動
文件頁數(shù): 6/13頁
文件大?。?/td> 920K
代理商: 0603YC103KAT
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Datasheet
2
SYMBOL
PARAMETER 6/
VALUE
NOTES
Vd1, Vd2T
POSITIVE SUPPLY VOLTAGE
Drain Voltage
8 V
Id1
Id2T
POSITIVE SUPPLY CURRENT
Drain Current
100 mA
300mA
1/
Pd
POWER DISSIPATION
4 W
2/
Vg1, Vg2
Ig1, Ig2
NEGATIVE GATE
Voltage
Gate Current
0 V to –3 V
5 mA
Vctrl1, Vctrl2
Ictrl1, Ictrl2
CONTROL GATE
Voltage
Gate Current
Vd/2 to –3 V
5 mA
3/
PIN
VIN
RF INPUT
Sinusoidal Continuous Wave Power
10.7Gb/s PRBS Input Voltage Peak to Peak
23 dBm
4 Vpp
TCH
OPERATING CHANNEL TEMPERATURE
150 0C4/ 5/
TSTG
STORAGE TEMPERATURE
-40 to 125 0C
TGA4953EPU
Notes:
1/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating.
2/ When operated at this bias condition with a base plate temperature of 800C, the median life is reduced.
3/ Assure Vctl1 never exceeds Vd1 and assure Vctrl2 never exceeds Vd2 during bias up and down sequences.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum
life, it is recommended that junction temperatures be maintained at the lowest possible levels.
6/ These ratings represent the maximum operable values for the device.
MAXIMUM RATINGS
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
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