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參數(shù)資料
| 型號(hào)： | 03P4MG |
| 廠商： | NEC Corp. |
| 英文描述： | 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR |
| 中文描述： | 300毫安高耐壓電壓模具可控硅 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 155K |
| 代理商： | 03P4MG |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
THYRISTORS
03P4MG,03P6MG
300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
DATA SHEET
Document No. D15290EJ4V0DS00 (4th edition)
Date Published February 2003 NS CP(K)
Printed in Japan
2002
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 03P4MG and 03P6MG are P-gate fully diffused mold SCRs
with an average on-state current of 300 mA. The repeat peak
off-state voltages (and reverse voltages) are 400 and 600 V.
FEATURES
400 and 600 V high-withstanding-voltage series of products
The non-repetitive withstanding voltage is a high 700 V, making
it easy to harmonize the rise voltage of the surge absorber.
High-sensitivity thyristor (IGT = 3 to 50
A)
Employs flame-retardant epoxy resin (UL94V-0)
APPLICATIONS
Leakage breakers, SSRs, various type of alarms, consumer
electronic equipments and automobile electronic components
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Remarks
03P4MG
03P6MG
Non-repetitive Peak Reverse Voltage
VRSM
700
V
RGK = 1 k
Non-repetitive Peak Off-state Voltage
VDSM
700
V
RGK = 1 k
Repetitive Peak Reverse Voltage
VRRM
400
600
V
RGK = 1 k
Repetitive Peak Off-state Voltage
VDRM
400
600
V
RGK = 1 k
Average On-state Current
IT(AV)
300 (TA = 30°C, Single half-wave,
θ = 180°)
mA
Refer to Figure 10.
Effective On-state Current
IT(RMS)
470
mA
Surge On-state Current
ITSM
8 (f = 50 Hz, Sine half-wave, 1 cycle)
A
Refer to Figure 2.
Fusing Current
∫ iT2dt
0.15 (1 ms
≤ t ≤ 10 ms)
A
2s
Critical Rate of On-state Current of Rise
dIT/dt
20
A/
s
Peak Gate Power Dissipation
PGM
100 (f
≥ 50 Hz, Duty ≤ 10%)
mW
Refer to Figure 3.
Average Gate Power Dissipation
PG(AV)
10
mW
Refer to Figure 3.
Peak Gate Forward Current
IFGM
100 (f
≥ 50 Hz, Duty ≤ 10%)
mA
Peak Gate Reverse Voltage
VRGM
6
V
Junction Temperature
Tj
40 to +125
°C
Storage Temperature
Tstg
55 to +150
°C
PACKAGE DRAWING (Unit: mm)
1.27
2.54
1.77
MAX.
4.2
MAX.
13
1.5
12.7
MIN.
5.5
MAX.
5.2 MAX.
φ
0.5
2
Electrode connection
1: Gate
2: Anode
3: Cathode
*TC test bench-mark
Standard weight: 0.3 g
5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 03P4MG(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 03P5J | 制造商:NEC 制造商全稱:NEC 功能描述:ALL DIFFUSED TYPE SCR POWER MINI MOLD |
| 03P5J(T1-AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 03P6MG | 制造商:NEC 制造商全稱:NEC 功能描述:300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR |
| 03P-SJN | 制造商:JST Manufacturing 功能描述:HOUSING RECEPTACLE CRIMP 2MM 3WAY 制造商:JST Manufacturing 功能描述:HOUSING, RECEPTACLE, CRIMP, 2MM, 3WAY, Series:SJN, No. of Positions:3, Pitch Spa 制造商:JST Manufacturing 功能描述:HOUSING, RECEPTACLE, CRIMP, 2MM, 3WAY, Series:SJN, No. of Positions:3, Pitch Spacing:2mm, For Use With:SJN-001PT-0.9 & SJN-002PT-0.9 Crimp Socket Contacts, SVHC:No SVHC (20-Jun-2013) , RoHS Compliant: Yes |
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