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參數(shù)資料
| 型號： | 03N70P |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 83K |
| 代理商： | 03N70P |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
/ -
600
-
V
VGS=0V, ID=1mA
/ A
650
-
V
VGS=0V, ID=1mA
/ H
700
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.6A
-
3.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=600V, VGS=0V
-
10
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=480V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=-
-
nA
Qg
Total Gate Charge
3
ID=3.3A
-
11.4
-
nC
Qgs
Gate-Source Charge
VDS=480V
-
3.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.2
-
nC
td(on)
Turn-on Delay Time
3
VDD=300V
-
8.4
-
ns
tr
Rise Time
ID=3.3A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
17.7
-
ns
tf
Fall Time
RD=91Ω
-
5.9
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
-
pF
Coss
Output Capacitance
VDS=25V
-
45
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.5V
-
3.3
A
ISM
Pulsed Source Current ( Body Diode )
1
-
13.2
A
VSD
Forward On Voltage
3
Tj=25℃, IS=3.3A, VGS=0V
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25
oC , V
DD=50V , L=15mH , RG=25Ω , IAS=3.3A.
3.Pulse width <300us , duty cycle <2%.
Ordering Code
AP03N70P- X : X Denote BVDSS Grade
Blank = BVDSS 600V
A
= BVDSS 650V
H
= BVDSS 700V
AP03N70P
±100
± 30V
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