44
CHAPTER 1 OUTLINE (
μ
PD780024, 780034 SUBSERIES)
1.8 Outline of Function
Part Number
Item
μ
PD780021
μ
PD780031
μ
PD780022
μ
PD780032
μ
PD780023
μ
PD780033
μ
PD780024
μ
PD780034
μ
PD78F0034
Internal memory
ROM
8 Kbytes
(Mask ROM)
16 Kbytes
(Mask ROM)
24 Kbytes
(Mask ROM)
32 Kbytes
(Mask ROM)
32 Kbytes
Note
(Flash memory)
High-speed RAM
512 bytes
1024 bytes
1024 bytes
Note
Memory space
64 Kbytes
General register
8 bits
×
32 registers (8 bits
×
8 registers
×
4 banks)
Minimum instruction
Minimum instruction execution time changeable function
execution time
When main system
clock selected
0.24
μ
s/0.48
μ
s/0.95
μ
s/1.91
μ
s/3.81
μ
s (@ 8.38-MHz operation)
When subsystem
clock selected
122
μ
s (@ 32.768-kHz operation)
Instruction set
16-bit operation
Multiply/divide (8 bits
×
8 bits, 16 bits
÷
8 bits)
Bit manipulate (set, reset, test, and Boolean operation)
BCD adjust, etc.
I/O port
Total
CMOS input
CMOS I/O
N-ch open-drain I/O 5-V breakdown
: 51
: 8
: 39
: 4
A/D converter
8-bit resolution
×
8 channels (
μ
PD780021, 780022, 780023, 780024)
10-bit resolution
×
8 channels (
μ
PD780031, 780032, 780033, 780034, 78F0034)
Low-voltage operation: AV
DD
= 2.7 to 5.5 V
Serial interface
3-wire serial I/O mode
UART mode
: 2 channels
: 1 channel
Timer
16-bit timer/event counter : 1 channel
8-bit timer/event counter : 2 channels
Watch timer
Watchdog timer
: 1 channel
: 1 channel
Timer output
Three outputs: (8-bit PWM output enable: 2)
Clock output
65.5 kHz, 131 kHz, 262 kHz, 524 kHz, 1.05 MHz, 2.10 MHz, 4.19 MHz, 8.38 MHz
(8.38 MHz with main system clock)
32.768 kHz (32.768 kHz with subsystem clock)
Buzzer output
1.02 kHz, 2.05 kHz, 4.10 kHz, 8.19 kHz (8.38 MHz with main system clock)
Vectored interrupt
Maskable
Internal: 13, External: 5
Non-maskable
Internal: 1
Software
1
Power supply voltage
V
DD
= 1.8 to 5.5 V
V
DD
= 2.7 to 5.5 V
Operating ambient temperature
T
A
= –40 to +85
°
C
Package
64-pin plastic shrink DIP (750 mils)
64-pin plastic QFP (14
×
14 mm)
64-pin plastic LQFP (12
×
12 mm)
Note
The capacities of internal flash memory and internal high-speed RAM can be changed by means of the
memory size switching register (IMS).