參數(shù)資料
型號(hào): μPD42S17405
廠商: NEC Corp.
英文描述: 16 M-Bit Dynamic RAM(16M 動(dòng)態(tài)RAM)
中文描述: 16 m位動(dòng)態(tài)隨機(jī)存儲(chǔ)器(RAM的1,600動(dòng)態(tài))
文件頁數(shù): 11/40頁
文件大?。?/td> 319K
代理商: ΜPD42S17405
μ
PD42S17405, 4217405
11
Common to Read, Write, Read Modify Write Cycle
Parameter
Symbol
t
RAC
= 50 ns
t
RAC
= 60 ns
t
RAC
= 70 ns
Unit
Notes
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Read / Write cycle time
t
RC
84
104
124
ns
RAS precharge time
t
RP
30
40
50
ns
CAS precharge time
t
CPN
8
10
10
ns
RAS pulse width
t
RAS
50
10,000
60
10,000
70
10,000
ns
1
CAS pulse width
t
CAS
8
10,000
10
10,000
12
10,000
ns
RAS hold time
t
RSH
10
10
12
ns
CAS hold time
t
CSH
38
40
50
ns
RAS to CAS delay time
t
RCD
11
37
14
45
14
52
ns
2
RAS
to column address delay time
t
RAD
9
25
12
30
12
35
ns
2
CAS to RAS precharge time
t
CRP
5
5
5
ns
3
Row address setup time
t
ASR
0
0
0
ns
Row address hold time
t
RAH
7
10
10
ns
Column address setup time
t
ASC
0
0
0
ns
Column address hold time
t
CAH
7
10
12
ns
OE lead time referenced to RAS
t
OES
0
0
0
ns
CAS to data setup time
t
CLZ
0
0
0
ns
OE to data setup time
t
OLZ
0
0
0
ns
OE to data delay time
t
OED
10
13
15
ns
Transition time (rise and fall)
t
T
1
50
1
50
1
50
ns
Refresh time
μ
PD42S17405
t
REF
128
128
128
ms
4
μ
PD4217405
32
32
32
Notes 1.
In CAS before RAS refresh cycles, t
RAS(MAX.)
is 100
μ
s.
If 10
μ
s < t
RAS
< 100
μ
s, RAS precharge time for CAS before RAS self refresh (t
RPS
) is applied.
2.
For read cycles, access time is defined as follows:
Input conditions
Access time
Access time from RAS
t
RAD
t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
t
RAC (MAX.)
t
RAC (MAX.)
t
RAD
> t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
t
AA (MAX.)
t
RAD
+ t
AA (MAX.)
t
RCD
> t
RCD (MAX.)
t
CAC (MAX.)
t
RCD
+ t
CAC (MAX.)
t
RAD (MAX.)
and t
RCD (MAX.)
are specified as reference points only ; they are not restrictive operating parameters.
They are used to determine which access time (t
RAC
, t
AA
or t
CAC
) is to be used for finding out when output
data will be available. Therefore, the input conditions t
RAD
t
RAD (MAX.)
and t
RCD
t
RCD (MAX.)
will not cause
any operation problems.
3.
t
CRP (MIN.)
requirement is applied to RAS, CAS cycles.
4.
This specification is applied only to the
μ
PD42S17405.
相關(guān)PDF資料
PDF描述
μPD4217805L 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDOM)
μPD42S17805L 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO
μPD4218165L 16M- bit CMOS dynamic RAMs(16M CMOS 動(dòng)態(tài)RAM)
μPD42S18165L 16M-bit CMOS dynamic RAMs(16M位CMOS 動(dòng)態(tài)RAM)
μPD4218165 16M- bit CMOS dynamic RAMs(16M CMOS 動(dòng)態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PD430 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
PD4306 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (600 Amperes / Up to 2400 Volts)
PD430607 功能描述:SCR MOD ISO DUAL 600V 700A RoHS:是 類別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目,二極管:1 SCR,1 個(gè)二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)(最大):150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))(最大):95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))(最大):210A 電流 - 非重復(fù)電涌,50、60Hz (Itsm):1785A,1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK(3 + 2) 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND
PD4307 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:POW-R-BLOK Dual SCR Isolated Module (700 Amperes / Up to 1800 Volts)
PD430807 功能描述:SCR MOD ISO DUAL 800V 700A RoHS:是 類別:半導(dǎo)體模塊 >> SCR 系列:- 其它有關(guān)文件:SCR Module Selection Guide 標(biāo)準(zhǔn)包裝:10 系列:- 結(jié)構(gòu):串聯(lián) - SCR/二極管 SCR 數(shù)目,二極管:1 SCR,1 個(gè)二極管 電壓 - 斷路:1600V 電流 - 柵極觸發(fā)電流 (Igt)(最大):150mA 電流 - 導(dǎo)通狀態(tài) (It (AV))(最大):95A 電流 - 導(dǎo)通狀態(tài) (It (RMS))(最大):210A 電流 - 非重復(fù)電涌,50、60Hz (Itsm):1785A,1870A 電流 - 維持(Ih):250mA 安裝類型:底座安裝 封裝/外殼:ADD-A-PAK(3 + 2) 包裝:散裝 其它名稱:*IRKL92/16AIRKL92/16IRKL92/16-ND