參數(shù)資料
型號(hào): μPD4217405L
廠商: NEC Corp.
英文描述: 16M- bit CMOS dynamic RAMs(16M CMOS 動(dòng)態(tài)RAM)
中文描述: 1,600位CMOS動(dòng)態(tài)存儲(chǔ)器(1,600的CMOS動(dòng)態(tài)內(nèi)存)
文件頁(yè)數(shù): 26/36頁(yè)
文件大?。?/td> 310K
代理商: ΜPD4217405L
μ
PD42S17405L, 4217405L
26
CAS Before RAS Self Refresh Cycle (Only for the
μ
PD42S17405L)
Remark
Address, OE : Don’t care I/O : Hi-Z
RAS
CAS
WE
V
IH_
V
IL_
V
IH_
V
IL_
V
IH_
V
IL_
t
CSR
t
WSR
t
WHR
t
RASS
t
RPS
t
CRP
t
RPC
t
CHS
t
CPN
Cautions on Use of CAS Before RAS Self Refresh
CAS before RAS self refresh can be used independently when used in combination with distributed CAS
before RAS long refresh; However, when used in combination with burst CAS before RAS long refresh or with
long RAS only refresh (both distributed and burst), the following cautions must be observed.
(1) Normal Combined Use of CAS Before RAS Self Refresh and Burst CAS Before RAS Long Refresh
When CAS before RAS self refresh and burst CAS before RAS long refresh are used in combination, please
perform CAS before RAS refresh 2,048 times within a 32 ms interval just before and after setting CAS before
RAS self refresh.
(2) Normal Combined Use of CAS Before RAS Self Refresh and Long RAS Only Refresh
When CAS before RAS self refresh and RAS only refresh are used in combination, please perform RAS only
refresh 2,048 times within a 32 ms interval just before and after setting CAS before RAS self refresh.
(3)
If t
RASS (MIN.)
is not satisfied at the beginning of CAS before RAS self refresh cycles (t
RAS
< 100
μ
s), CAS before
RAS refresh cycles will be executed one time.
If 10
μ
s < t
RAS
< 100
μ
s, RAS precharge time for CAS before RAS self refresh (t
RPS
) is applied.
And refresh cycles (2,048/128 ms) should be met.
For details, please refer to
How to use DRAM
User’s Manual.
相關(guān)PDF資料
PDF描述
μPD42S17405L 16M- bit CMOS dynamic RAMs(16M CMOS 動(dòng)態(tài)RAM)
μPD4217405 16 M-Bit Dynamic RAM(16M 動(dòng)態(tài)RAM)
μPD42S17405 16 M-Bit Dynamic RAM(16M 動(dòng)態(tài)RAM)
μPD4217805L 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDOM)
μPD42S17805L 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO
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