參數(shù)資料
型號(hào): μPC8119T
廠商: NEC Corp.
英文描述: Variable Gain Amplifier Silicon MMIC(增益放大器微波集成電路)
中文描述: 可變?cè)鲆娣糯笃鞴鑶纹呻娐罚ㄔ鲆娣糯笃魑⒉呻娐罚?/td>
文件頁(yè)數(shù): 5/52頁(yè)
文件大小: 550K
代理商: ΜPC8119T
5
μ
PC8119T,
μ
PC8120T
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
out
= 3.0 V, Z
S
= Z
L
= 50
, External matched output port)
μ
PC8119T
μ
PC8120T
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Unit
Circuit Current
I
CC
No signal, I
CC
= I
VCC
+ I
out
7.5
11
15
7.5
11
15
mA
Maximum Power Gain
G
PMAX
f = 950 MHz, P
in
= –30 dBm
f = 1440 MHz, P
in
= –30 dBm
10
10
12.5
13
15
16
10.5
10.5
13
13.5
15.5
16.5
dB
Gain Control Range
Note
GCR
f = 950 MHz, Pin = –30 dBm
f = 1440 MHz, Pin = –30 dBm
40
35
50
45
40
35
50
45
dB
Noise Figure
NF
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
8.5
7.5
11.5
10.5
9.0
7.5
12
10.5
dB
Isolation
ISL
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
27
31
32
36
26
30
31
35
dB
Input Return Loss
RL
in
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
3
3
6
6
3
3
6
6
dB
1 dB Compression Output
Power
P
O (1 dB)
f = 950 MHz, G
PMAX
f = 1440 MHz, G
PMAX
0
+1.0
+3
+4
+0.5
0
+3.5
+3
dBm
Note
Gain Control Range (GCR) specification: GCR = G
PMAX
– G
PMIN
(dB)
Conditions
μ
PC8119T: G
PMAX
@ V
AGC
= 0 V, G
PMIN
@ V
AGC
= V
CC
μ
PC8120T: G
PMAX
@ V
AGC
= V
CC
, G
PMIN
@ V
AGC
= 0 V
Remark
Measured on TEST CIRCUIT 1 and 2
STANDARD CHARACTERISTICS FOR REFERENCE
(Unless otherwise specified, T
A
= +25°C, V
CC
= V
out
= 3.0 V, Z
S
= Z
L
= 50
, External matched output port)
Reference Value
Parameter
Symbol
Test Conditions
μ
PC8119T
μ
PC8120T
Unit
Maximum Power Gain
G
PMAX
f = 1900 MHz, P
in
= –30 dBm
12.5
13
dB
Gain Control Range
Note
GCR
f = 1900 MHz, P
in
= –30 dBm
22
22
dB
Noise Figure
NF
f = 1900 MHz, G
PMAX
7.2
7.3
dB
1 dB Compression Output Power
P
O (1 dB)
f = 1900 MHz, G
PMAX
+3.0
+2.5
dBm
Note
Gain Control Range (GCR) specification: GCR = G
PMAX
– G
PMIN
(dB)
Conditions
μ
PC8119T: G
PMAX
@ V
AGC
= 0 V, G
PMIN
@ V
AGC
= V
CC
μ
PC8120T: G
PMAX
@ V
AGC
= V
CC
, G
PMIN
@ V
AGC
= 0 V
Remark
Measured on APPLICATION CIRCUIT EXAMPLE
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