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參數(shù)資料
| 型號(hào)： | μPC1675G |
| 廠商： | NEC Corp. |
| 英文描述： | General Purpose Wide Band Amplifier(通用寬帶放大器) |
| 中文描述： | 通用寬帶放大器（通用寬帶放大器） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | ΜPC1675G |
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC1675G
GENERAL PURPOSE WIDE BNAD AMPLIFIER
DATA SHEET
Document No. P12446EJ2V0DS00 (2nd edition)
(Previous No. IC-1890)
Date Published March 1997 N
Printed in Japan
1989
DESCRIPTION
The
μ
PC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed
for use as a wide bnad amplifier convers from HF band to UHF band.
FEATURES
Excellent frequency response : 1.9 GHz TYP.
@ 3 dB down below flat gain.
High isolation.
Super small package.
Uni- and low voltage operation : V
CC
= 5 V
Input and output matching 50
.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Supply Voltage
Total Power Dissipation
Operating Temperature
Storage Temperature
V
CC
P
T
T
opt
T
stg
6
V
200
mW
°
C
°
C
40 to +85
55 to +150
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C, V
CC
= 5 V)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Circuit Current
I
CC
12
17
22
mA
No Signal
Power Gain
G
P
10
12
14
dB
f = 0.5 GHz
Noise Figure
NF
5.5
7.0
dB
f = 0.5 GHz
Upper Limit Operating Frequency
f
u
1.6
1.9
GHz
3 dB down below flat gain
Isolation
ISL
21
25
dB
f = 0.5 GHz
Input Return Loss
RL
in
9
12
dB
f = 0.5 GHz
Output Return Loss
RL
out
8
11
dB
f = 0.5 GHz
Maximum Output Level
P
O
2
4
dBm
f = 0.5 GHz, P
in
= 0 dBm
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
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