參數(shù)資料
型號(hào): μPA814T
廠商: NEC Corp.
英文描述: Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor(微波低噪聲放大器NPN硅外延晶體管)
中文描述: 微波低噪聲放大器NPN硅外延晶體管(微波低噪聲放大器npn型硅外延晶體管)
文件頁(yè)數(shù): 4/10頁(yè)
文件大?。?/td> 52K
代理商: ΜPA814T
μ
PA814T
4
Collector Current l
C
(mA)
1
2
N
NOISE FIGURE vs.
COLLECTOR CURRENT
1
2
3
5
10
3
7
f = 2 GHz
f = 1 GHz
Collector to Base Voltage V
CB
(V)
1
0.5
F
r
FEED-BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
1
5
20
f = 1 MHz
10
1.0
0.1
Frequency f (GHz)
10
20
M
I
2
l
MAXIMUM AVAILABLE GAIN / INSERTION
POWER GAIN vs. FREQUENCY
0.1
0.5
1
5
V
CE
= 1 V
I
C
= 5 mA
30
Frequency f (GHz)
N
NOISE FIGURE vs.FREQUENCY
0.1
0.5
2
V
CE
= 1 V
I
C
= 5 mA
1.0
1.5
0.5
MAG
IS
21e
l
2
0
2
V
CE
= 1 V
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