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參數(shù)資料
| 型號： | μPA812T |
| 廠商： | NEC Corp. |
| 英文描述： | Low Noise, High Frequncy Amplifer NPN Transistor(高頻低噪聲放大器NPN晶體管) |
| 中文描述： | 低噪聲，高Frequncy放大器NPN晶體管（高頻低噪聲放大器npn型晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 43K |
| 代理商： | ΜPA812T |
1995
PRELIMINARY DATA SHEET
PACKAGE DRAWINGS
(Unit: mm)
SILICON TRANSISTOR
μ
PA812T
The
μ
PA812T has built-in 2 low-voltage transistors which are designed to
amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 12 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
A Small Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC4227)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA812T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA812T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
10
V
Emitter to Base Voltage
V
EBO
1.5
V
Collector Current
I
C
65
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
110 mW must not be exceeded in 1 element.
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2
×
2SC4227) SMALL MINI MOLD
Document No. P11465EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The information in this document is subject to change without notice.
PIN CONFIGURATION (Top View)
PIN CONNECTIONS
1. Collector (Q1)
2. Base (Q2)
3. Collector (Q2)
4. Emitter (Q2)
5. Emitter (Q1)
6. Base (Q1)
6
5
4
1
2
3
Q
1
Q
2
2.1±0.1
1.25
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
X
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