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參數(shù)資料
| 型號(hào)： | μPA806T |
| 廠商： | NEC Corp. |
| 英文描述： | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 中文描述： | 微波低噪聲放大器NPN硅晶體管（微波低噪聲放大器npn型晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 42K |
| 代理商： | ΜPA806T |
μ
PA806T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 10 mA
Note 1
75
150
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
12
GHz
Feed-back Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.4
0.7
pF
Insertion Power Gain
|S
21
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7
8.5
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
1.5
2.5
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 3 V, I
C
= 10 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
≤
350
μ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
KB
Marking
T83
h
FE
Value
75 to 150
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
50
100
150
100
0
T
T
Ambient Temperature T
A
(°C)
200
Free Air
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
0
10
0.5
1.0
C
C
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
30
40
50
V
CE
= 3 V
PerElemen
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