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參數(shù)資料
| 型號： | μPA804TC |
| 廠商： | NEC Corp. |
| 英文描述： | NPN Epitaxial Transisitor(NPN外延晶體管) |
| 中文描述： | npn型外延Transisitor（npn型外延晶體管） |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 66K |
| 代理商： | ΜPA804TC |
μ
PA804TC
Data Sheet P14549EJ1V0DS00
3
TYPICAL CHARACTERISTICS (T
A
= +25
°
C)
12.00
V
CE
= 5 V
f = 1 GHz
V
CE
= 5 V
f = 1 GHz
C
C
Base to Emitter Voltage V
BE
(V)
T
T
Ambient Temperature T
A
(
°
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
G
T
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
D
F
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
I
S
2
2
Collector Current I
C
(mA)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
C
C
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
0
8
16
V
CE
= 5 V
V
CE
= 5 V
24
0
0.2
0.4
0.6
0.8
1.0
0
100
150
200
0
50
100
150
10
100
0.1
1
10
100
0
4
2
8
6
10
12
14
0
1
2
3
4
5
6
I
B
= 160 A
I
B
= 140 A
I
B
= 120 A
I
B
= 100 A
I
B
= 80 A
I
B
= 60 A
I
B
= 40 A
I
B
= 20 A
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
0.00
2.00
4.00
6.00
8.00
10.00
14.00
1
10
100
1
10
100
2 Elements in total
Per
Element
Free Air
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