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參數(shù)資料
| 型號： | μPA102 |
| 廠商： | NEC Corp. |
| 英文描述： | High Frequency NPN Transistor Array(高頻NPN晶體管陣列) |
| 中文描述： | 高頻NPN晶體管陣列（高頻npn型晶體管陣列） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 52K |
| 代理商： | ΜPA102 |
1995,1999
DATA SHEET
COMPOUND TRANSISTOR
μ
PA102
FEATURES
TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS:
(Each Transistor has f
T
9 GHz)
OUTSTANDING h
FE
LINEARITY
TWO PACKAGE OPTIONS:
μ
PA102B:
Superior thermal dissipation due to studded 14-pin ceramic package
μ
PA102G:
Reduced circuit size due to 14-pin plastic SOP package for surface mounting
DESCRIPTION AND APPLICATIONS
The
μ
PA102 is a user configurable Silicon bipolar transistor array consisting of two separate differential amplifiers.
It is available in a surface mount (14-pin plastic SOP) package and a 14-pin ceramic package. Typical applications
include: pulse pattern generators, oscillators, differential amps, high speed comparators, electro-optic signal
processing up to 1 Gigabits/second, and advanced cellular phone systems.
ORDERING INFORMATION
PART NUMBER
PACKAGE
μ
PA102B-E1
14-pin ceramic package
μ
PA102G-E1
14-pin plastic SOP (225 mil)
ABSOLUTE MAXIMUM RATINGS (T
A
= +25
°
C)
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
*
Collector to Base Voltage
V
15
V
CEO
*
Collector to Emitter Voltage
V
6
V
EBO
*
Emitter to Base Voltage
V
2.5
I
C
*
Collector Current
mA
40
P
T
Power Dissipation
μ
PA102B
μ
PA102G
mW
mW
650
350
T
J
Junction Temperature
μ
PA102B
μ
PA102G
°
C
°
C
200
125
T
STG
Storage Temperature
μ
PA102B
μ
PA102G
°
C
°
C
–55 to +200
–55 to +125
*
Absolute maximum ratings for each transistor.
HIGH FREQUENCY NPN TRANSISTOR ARRAY
Caution electro-static sensitive devices
Document No. P10707EJ2V0DS00 (2nd edition)
Date Published October 1999 N CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
The mark shows major revised points.
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