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參數(shù)資料
| 型號(hào)： | XQ1701LSO20V |
| 廠商： | Xilinx, Inc. |
| 英文描述： | QPro Series Configuration PROMs (XQ) including Radiation-Hardened Series (XQR) |
| 中文描述： | QPro系列配置PROM的（學(xué)琴），包括抗輻射系列（XQR） |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | XQ1701LSO20V |
R
Standby Mode
The PROM enters a low-power standby mode whenever CE
is asserted High. The output remains in a high-impedance
state regardless of the state of the OE input.
Programming
The devices can be programmed on programmers supplied
by Xilinx or qualified third-party vendors. The user must
ensure that the appropriate programming algorithm and the
latest version of the programmer software are used. The
wrong choice can permanently damage the device.
Radiation Characteristics (XQR1701L only)
Table 1:
Truth Table for Control Inputs
Control Inputs
Internal Address
Outputs
RESET
CE
DATA
CEO
I
CC
Active
Reduced
Inactive
Low
If address < TC
(1)
: increment
If address > TC
(1)
: don
’
t change
Active
High-Z
High
Low
Active
Low
Held reset
High-Z
High
Active
Inactive
High
Not changing
High-Z
High
Standby
Active
High
Held reset
High-Z
High
Standby
Notes:
1.
2.
The XC1700 RESET input has programmable polarity
TC = Terminal Count = highest address value. TC + 1 = address 0.
Symbol
Description
Min
Max
Units
TID
Total ionizing dose, Method 1019
50
-
krad(Si)
SEL
Single event latch-up.
Heavy ion saturation cross section, LET
1
> 120 MeV cm
2
/mg
Single event bit upset.
Heavy ion saturation cross section
LET > 120 MeV cm
2
/mg
-
0
(cm
2
/Device)
SEU
-
0
(cm
2
/Bit)
SEFI
2
Single event functional interupt,
Heavy ion saturation cross section,
10% saturated intercept at LET = 6.0 MeV cm
2
/mg
-
1.2e
–
5
(cm
2
/Device)
Notes:
1.
Single Event Effects testing was performed with heavy ion to a maximum LET of 120 MeV cm
2
/mg.
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