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參數(shù)資料
| 型號(hào)： | XP1D874 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel junction FET |
| 中文描述： | 1 mA, 40 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | SMINI5-G1, SC-88A, 5 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 28K |
| 代理商： | XP1D874 |
1
Composite Transistors
XP1D874
N-channel junction FET
For low-frequency impedance conversion
For infrared sensor
I
Features
G
Two elements incorporated into one package.
(Drain-coupled FETs)
G
Reduction of the mounting area and assembly cost by one half.
I
Basic Part Number of Element
G
2SK1842
×
2 elements
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
EQ
Internal Connection
Parameter
Symbol
Ratings
Unit
Gate to drain voltage
V
GDO
V
GSO
I
G
I
D
P
T
T
j
T
stg
–40
V
Gate to source voltage
–40
V
Gate current
10
mA
Drain current
1
mA
Total power dissipation
150
mW
Junction temperature
150
C
Storage temperature
–55 to +150
C
Rating
of
element
Overall
1 : Source (FET1)
2 : Drain
3 : Source (FET2)
4 : Gate (FET2)
5 : Gate (FET1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
2.1
±
0.1
1.25
±
0.1
0.425
0
±
0
2
±
0
0
1
2
3
4
5
0
±
0
±
0
0
0
0
+
–
0.2
±
0.1
0.425
0
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate to drain voltage
V
GDS
I
DSS
I
GSS
| Y
fS
|
V
GSC
C
iss
C
rss
C
oss
I
G
= –10
μ
A, V
GS
= 0
V
DS
= 10V, V
GS
= 0
V
GS
= –20V, V
DS
= 0
V
DS
= 10V, V
GS
= 0, f = 1kHz
V
DS
= 10V, I
D
= 1
μ
A
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
–40
V
Drain current
30
200
μ
A
Gate cutoff current
– 0.5
nA
Forward transfer admittance
0.05
mS
Gate to source cutoff voltage
–1.3
–3.0
V
Common source short-circuit input capacitance
1.0
pF
Common source reverse transfer capacitance
0.4
pF
Common source short-circuit output capacitance
0.4
pF
1
FET 2
FET 1
2
3
4
5
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