參數(shù)資料
型號: XCV812E-8FG556I
廠商: Xilinx, Inc.
英文描述: Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays
中文描述: 的Virtex娥內(nèi)存擴展1.8伏現(xiàn)場可編程門陣列
文件頁數(shù): 47/116頁
文件大小: 1087K
代理商: XCV812E-8FG556I
Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays
DS025-2 (v2.1) July 17, 2002
www.xilinx.com
1-800-255-7778
Module 2 of 4
43
R
LVTTL
LVTTL requires no termination. DC voltage specifications
appears in
Table 34
.
LVCMOS2
LVCMOS2 requires no termination. DC voltage specifica-
tions appear in
Table 35
.
LVCMOS18
LVCMOS18 does not require termination.
Table 36
lists DC
voltage specifications.
AGP-2X
The specification for the AGP-2X standard does not docu-
ment a recommended termination technique. DC voltage
specifications appear in
Table 37
.
Table 34:
LVTTL Voltage Specifications
Parameter
Min
Typ
Max
V
CCO
3.0
3.3
3.6
V
REF
-
-
-
V
TT
-
-
-
V
IH
2.0
-
3.6
V
IL
0.5
-
0.8
V
OH
2.4
-
-
V
OL
-
-
0.4
I
OH
at V
OH
(mA)
24
-
-
I
OL
at V
OL
(mA)
Note: V
OL
and V
OH
for lower drive currents sample tested.
24
-
-
Table 35:
LVCMOS2 Voltage Specifications
Parameter
Min
Typ
Max
V
CCO
2.3
2.5
2.7
V
REF
-
-
-
V
TT
-
-
-
V
IH
1.7
-
3.6
V
IL
0.5
-
0.7
V
OH
1.9
-
-
V
OL
-
-
0.4
I
OH
at V
OH
(mA)
12
-
-
I
OL
at V
OL
(mA)
12
-
-
Table 36:
LVCMOS18 Voltage Specifications
Parameter
Min
Typ
Max
V
CCO
1.70
1.80
1.90
V
REF
-
-
-
V
TT
-
-
-
V
IH
0.7 x V
CCO
-
1.95
V
IL
– 0.5
-
0.2 x V
CCO
V
OH
V
CCO
– 0.4
-
-
V
OL
-
-
0.4
I
OH
at V
OH
(mA)
–8
-
-
I
OL
at V
OL
(mA)
8
-
-
Table 37:
AGP-2X Voltage Specifications
Parameter
Min
Typ
Max
V
CCO
V
REF
= N
×
V
CCO(1)
3.0
3.3
3.6
1.17
1.32
1.48
V
TT
-
-
-
V
IH
= V
REF
+ 0.2
1.37
1.52
-
V
IL
= V
REF
– 0.2
V
OH
= 0.9
×
V
CCO
V
OL
= 0.1
×
V
CCO
-
1.12
1.28
2.7
3.0
-
-
0.33
0.36
I
OH
at V
OH
(mA)
Note 2
-
-
I
OL
at V
OL
(mA)
Note 2
-
-
Notes:
1.
N must be greater than or equal to 0.39 and less than or
equal to 0.41.
Tested according to the relevant specification.
2.
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