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參數(shù)資料
| 型號： | XCV812E-8BG556C |
| 廠商： | Xilinx, Inc. |
| 英文描述： | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| 中文描述： | 的Virtex娥內(nèi)存擴展1.8伏現(xiàn)場可編程門陣列 |
| 文件頁數(shù)： | 55/116頁 |
| 文件大?。?/td> | 1087K |
| 代理商： | XCV812E-8BG556C |
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DS025-3 (v2.2) July 17, 2002
www.xilinx.com
1-800-255-7778
Module 3 of 4
1
2000-2002 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at
http://www.xilinx.com/legal.htm
.
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.
Virtex-E Extended Memory Electrical Characteristics
Definition of Terms
Electrical and switching characteristics are specified on a
per-speed-grade basis and can be designated as Advance,
Preliminary, or Production. Each designation is defined as
follows:
Advance
: These speed files are based on simulations only
and are typically available soon after device design specifi-
cations are frozen. Although speed grades with this desig-
nation are considered relatively stable and conservative,
some under-reporting might still occur.
Preliminary
: These speed files are based on complete ES
(engineering sample) silicon characterization. Devices and
speed grades with this designation are intended to give a
better indication of the expected performance of production
silicon. The probability of under-reporting delays is greatly
reduced as compared to Advance data.
Production
: These speed files are released once enough
production silicon of a particular device family member has
been characterized to provide full correlation between
speed files and devices over numerous production lots.
There is no under-reporting of delays, and customers
receive formal notification of any subsequent changes. Typ-
DC Characteristics
ically, the slowest speed grades transition to Production
before faster speed grades.
All specifications are representative of worst-case supply
voltage and junction temperature conditions. The parame-
ters included are common to popular designs and typical
applications. Contact the factory for design considerations
requiring more detailed information.
Table 1
correlates the current status of each Virtex-E
Extended Memory device with a corresponding speed file
designation.
All specifications are subject to change without notice.
Absolute Maximum Ratings
0
Virtex-E 1.8 V Extended Memory
Field Programmable Gate Arrays
DS025-3 (v2.2) July 17, 2002
0
0
Production Product Specification
R
Table 1:
Virtex-E Extended Memory Device
Speed Grade Designations
Device
Speed Grade Designations
Advance
Preliminary
Production
XCV405E
–8, –7, –6
XCV812E
–8, –7, –6
Symbol
Description
(1)
Units
V
CCINT
Internal Supply voltage relative to GND
(2)
–0.5 to 2.0
V
V
CCO
Supply voltage relative to GND
–0.5 to 4.0
V
V
REF
Input Reference Voltage
–0.5 to 4.0
V
V
IN
Input voltage relative to GND
–0.5 to 4.0
V
V
TS
Voltage applied to 3-state output
–0.5 to 4.0
V
V
CC
Longest Supply Voltage Rise Time from 0 V – 1.71 V
50
ms
T
STG
Storage temperature (ambient)
–65 to +150
°
C
T
J
Junction temperature
(3)
Plastic packages
+125
°
C
Notes:
1.
Stresses beyond those listed under Absolute Maximum Ratings can cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those listed under Operating Conditions
is not implied. Exposure to Absolute Maximum Ratings conditions for extended periods of time can affect device reliability.
For soldering guidelines and thermal considerations, see the
Device Packaging
information on the Xilinx website.
2.
相關PDF資料 |
PDF描述 |
|---|---|
| XCV812E-8BG556I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG560C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG560I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG676C | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG676I | Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| XCV812E-8BG556I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG560C | 功能描述:IC FPGA 1.8V C-TEMP 560-MBGA RoHS:否 類別:集成電路 (IC) >> 嵌入式 - FPGA（現(xiàn)場可編程門陣列） 系列:Virtex®-E EM 產(chǎn)品變化通告:XC4000(E,L) Discontinuation 01/April/2002 標準包裝:24 系列:XC4000E/X LAB/CLB數(shù):100 邏輯元件/單元數(shù):238 RAM 位總計:3200 輸入/輸出數(shù):80 門數(shù):3000 電源電壓:4.5 V ~ 5.5 V 安裝類型:表面貼裝 工作溫度:-40°C ~ 100°C 封裝/外殼:120-BCBGA 供應商設備封裝:120-CPGA（34.55x34.55） |
| XCV812E-8BG560I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG676C | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
| XCV812E-8BG676I | 制造商:XILINX 制造商全稱:XILINX 功能描述:Virtex-E 1.8 V Extended Memory Field Programmable Gate Arrays |
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