參數(shù)資料
型號: XC4013E-5HG240M
廠商: Xilinx, Inc.
英文描述: Programmable Gate Arrays
中文描述: 可編程門陣列
文件頁數(shù): 12/68頁
文件大?。?/td> 462K
代理商: XC4013E-5HG240M
R
XC4000E and XC4000X Series Field Programmable Gate Arrays
6-16
May 14, 1999 (Version 1.6)
Figure 8
shows the write timing for level-sensitive, sin-
gle-port RAM.
The relationships between CLB pins and RAM inputs and
outputs for single-port level-sensitive mode are shown in
Table 7
.
Figure 9
and
Figure 10
show block diagrams of a CLB con-
figured as 16x2 and 32x1 level-sensitive, single-port RAM.
Initializing RAM at Configuration
Both RAM and ROM implementations of the XC4000
Series devices are initialized during configuration. The ini-
tial contents are defined via an INIT attribute or property
attached to the RAM or ROM symbol, as described in the
schematic library guide. If not defined, all RAM contents
are initialized to all zeros, by default.
RAM initialization occurs only during configuration. The
RAM content is not affected by Global Set/Reset.
Table 7: Single-Port Level-Sensitive RAM Signals
G'
G1 G4
F1 F4
WRITE
DECODER
1 of 16
D
IN
16-LATCH
ARRAY
X6748
4
4
MUX
F'
WRITE
DECODER
1 of 16
D
IN
16-LATCH
ARRAY
READ
ADDRESS
READ
ADDRESS
WRITE PULSE
LATCH
ENABLE
LATCH
ENABLE
K
(CLOCK)
WRITE PULSE
MUX
4
4
C1 C4
4
WE
D1
D0
EC
Figure 7: 16x1 Edge-Triggered Dual-Port RAM
RAM Signal
CLB Pin
Function
Data In
Address
Write Enable
Data Out
D
A[3:0]
WE
O
D0 or D1
F1-F4 or G1-G4
WE
F’ or G’
WC
T
ADDRESS
WRITE ENABLE
DATA IN
AS
T
WP
T
DS
T
DH
T
REQUIRED
AH
T
X6462
Figure 8: Level-Sensitive RAM Write Timing
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