參數(shù)資料
型號(hào): WV3EG265M72EFSU265D4N
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類(lèi): DRAM
英文描述: 128M X 72 DDR DRAM MODULE, 0.75 ns, ZMA200
封裝: SODIMM-200
文件頁(yè)數(shù): 10/11頁(yè)
文件大小: 171K
代理商: WV3EG265M72EFSU265D4N
WV3EG265M72EFSU-D4
8
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
May 2006
Rev. 0
ADVANCED
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND RECOMMENDED
AC OPERATING CONDITIONS (Continued)
VCC = VCCQ = +2.5V ±0.2V
AC CHARACTERISTICS
335
262
265
UNITS
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
Exit self regresh to read command
tXSRD
200
tCK
Refresh interval time
tREFI
7.8
s
Output DQS vaild window
tQH
tHP-tQHS
ns
Clock half period
tHP
tCLmin or
tCHmin
tCLmin or
tCHmin
tCLmin or
tCHmin
ns
Data hold skew factor
tQHS
0.55
0.75
ns
DQS write postamble
tWPST
0.4
0.6
0.4
0.6
0.4
0.6
ns
Active Read with auto precharge command
tRAP
18
20
ns
Auto precharge Write recovery + Precharge time
tRAL
tWR/tCK +
tRP/tCK
tWR/tCK +
tRP/tCK
tWR/tCK +
tRP/tCK
tCK
* AC specication is based on SAMSUNG components. Other DRAM manufactures specication may be different.
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