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參數(shù)資料
| 型號(hào)： | WSE128K16-73H1C |
| 英文描述： | 128Kx16 SRAM/EEPROM MODULE |
| 中文描述： | 128Kx16的SRAM / EEPROM的模塊 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 580K |
| 代理商： | WSE128K16-73H1C |
WSE128K16-XXX
PRELIMINARY
6
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
EEPROM WRITE
A write cycle is initiated when OE# is high and a low pulse
is on EWE# or ECS# with ECS# or EWE# low. The address
is latched on the falling edge of ECS# or EWE# whichever
occurs last. The data is latched by the rising edge of ECS#
or EWE#, whichever occurs first. A byte write operation
will automatically continue to completion.
WRITE CYCLE TIMING
Figures 7 and 8 show the write cycle timing relationships.
A write cycle begins with address application, write enable
and chip select. Chip select is accomplished by placing the
ECS# line low. Write enable consists of setting the EWE#
line low. The write cycle begins when the last of either
ECS# or EWE# goes low.
The EWE# line transition from high to low also initiates
an internal 150 μsec delay timer to permit page mode
operation. Each subsequent EWE# transition from high
to low that occurs before the completion of the 150 μsec
time out will restart the timer from zero. The operation of
the timer is the same as a retriggerable one-shot.
EEPROM AC WRITE CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C ≤ T
A
≤ +125°C
Write Cycle Parameter
Write Cycle Time, TYP = 6ms
Address Set-up Time
Write Pulse Width (EWE# or ECS#)
Chip Select Set-up Time
Address Hold Time
Data Hold Time
Chip Select Hold Time
Data Set-up Time
Output Enable Set-up Time
Output Enable Hold Time
Write Pulse Width High
Symbol
t
WC
t
AS
t
WP
t
CS
t
AH
t
DH
t
CSH
t
DS
t
OES
t
OEH
t
WPH
Min
Max
10
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
150
0
100
10
0
100
10
10
50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| WSE128K16-73H1CA | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1I | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1IA | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1M | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1MA | 128Kx16 SRAM/EEPROM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSE128K16-73H1CA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1I | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
| WSE128K16-73H1IA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1M | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1MA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
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