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參數(shù)資料
| 型號： | WSE128K16-73H1C |
| 英文描述： | 128Kx16 SRAM/EEPROM MODULE |
| 中文描述： | 128Kx16的SRAM / EEPROM的模塊 |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 580K |
| 代理商： | WSE128K16-73H1C |
WSE128K16-XXX
PRELIMINARY
4
White Electronic Designs Corporation (602) 437-1520 www.wedc.com
White Electronic Designs
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March 2005
Rev. 3
FIGURE 3 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
NOTES:
V
Z
is programmable from -2V to +7V.
I
& I
programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
& I
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
Typ
Unit
V
ns
V
V
V
IL
= 0, V
IH
= 3.0
5
1.5
1.5
SRAM AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C ≤ T
A
≤ +125°C
-35
Min
t
RC
35
t
AA
t
OH
0
t
ACS
t
OE
t
CLZ1
3
t
OLZ1
0
t
CHZ1
t
OHZ1
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
1. This parameter is guaranteed by design but not tested.
Symbol
-45
-70
Units
Max
Min
45
Max
Min
70
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
35
45
70
0
5
35
20
45
25
70
35
3
0
5
5
20
20
20
20
25
25
SRAM AC CHARACTERISTICS
V
CC
= 5.0V, GND = 0V, -55°C ≤ T
A
≤ +125°C
-35
Min
t
WC
35
t
CW
25
t
AW
25
t
DW
20
t
WP
25
t
AS
0
t
AH
0
t
OW1
4
t
WHZ1
t
DH
0
Parameter
Write Cycle
Symbol
-45
-70
Units
Max
Min
45
30
30
25
30
0
0
4
Max
Min
70
60
60
30
50
5
5
5
Max
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
1. This parameter is guaranteed by design but not tested.
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
25
25
0
0
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V ≈ 1.5V
(Bipolar Supply)
Current Source
OH
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PDF描述 |
|---|---|
| WSE128K16-73H1CA | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1I | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1IA | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1M | 128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1MA | 128Kx16 SRAM/EEPROM MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| WSE128K16-73H1CA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1I | 制造商:Microsemi Corporation 功能描述:128K X 16 MIXED MODULE, 5V, 70NS SRAM, 300NS EEPROM, 66 PGA - Bulk |
| WSE128K16-73H1IA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1M | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
| WSE128K16-73H1MA | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:128Kx16 SRAM/EEPROM MODULE |
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