- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363913 > WEDPNF8M721V-1210BM (Electronic Theatre Controls, Inc.) 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package PDF資料下載
參數(shù)資料
| 型號： | WEDPNF8M721V-1210BM |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| 中文描述： | 8Mx72同步DRAM 8MB閃存的混合模塊多芯片封裝 |
| 文件頁數(shù)： | 1/42頁 |
| 文件大?。?/td> | 1276K |
| 代理商： | WEDPNF8M721V-1210BM |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁
1
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
WEDPNF8M721V-XBX
September 2002 Rev. 3
8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module
Multi-Chip Package
FEATURES
Package:
275 Plastic Ball Grid Array (PBGA), 32mm x 25mm
Commercial, Industrial and Military Temperature Ranges
Weight:
WEDPNF8M721V-XBX - 2.5 grams typical
SDRAM PERFORMANCE FEATURES
Organized as 8M x 72
High Frequency = 100, 125MHz
Single 3.3V ±0.3V power supply
Fully Synchronous; all signals registered on positive
edge of system clock cycle
Internal pipelined operation; column address can be
changed every clock cycle
Internal banks for hiding row access/precharge
Programmable Burst length 1,2,4,8 or full page
4096 refresh cycles
FLASH PERFORMANCE FEATURES
User Configurable as 1Mx8 or 512Kx16
Access Times of 100, 120, 150ns
3.3 Volt for Read and Write Operations
1,000,000 Erase/Program Cycles
Sector Architecture
One 16KByte, two 8KBytes, one 32KByte, and fif
teen 64KBytes in byte mode
One 8K word, two 4K words, one 16K word, and
fifteen 32K word sectors in word mode.
Any combination of sectors can be concurrently
erased. Also supports full chip erase
Boot Code Sector Architecture (Bottom)
Embedded Erase and Program Algorithms
Erase Suspend/Resume
Supports reading data from or programing data to a
sector not being erased
BENEFITS
42% SPACE SAVINGS
Reduced part count
Reduced I/O count
14% I/O Reduction
Suitable for hi-reliability applications
SDRAM Upgradeable to 16M x 72 density (contact
factory for information)
Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32)
density
* This data sheet describes a product that may or may not be under
development and s subject to change or cancellation without notice.
ADVANCED*
相關PDF資料 |
PDF描述 |
|---|---|
| WEDPNF8M721V-1212BI | 8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WF128K16 | 5V FLASH MODULE |
| WF128K16-120CC5 | 5V FLASH MODULE |
| WF128K16-120CC5A | 5V FLASH MODULE |
| WF128K16-120CI5 | 5V FLASH MODULE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| WEDPNF8M721V-1212BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1212BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1212BM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1215BC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
| WEDPNF8M721V-1215BI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package |
發(fā)布緊急采購，3分鐘左右您將得到回復。