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參數(shù)資料
| 型號： | W987Z6CBG80 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 9 MM, 1.20 MM HEIGHT, FBGA-54 |
| 文件頁數(shù)： | 2/46頁 |
| 文件大小： | 1634K |
| 代理商： | W987Z6CBG80 |
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Preliminary W987Z6CB
- 10 -
Notes:
1. Operation exceeds "ABSOLUTE MAXIMUM RATING" may adversely affect the life and reliability of
the devices.
2. All voltages are referenced to VSS
3. These parameters depend on the cycle rate and listed values are measured at a cycle rate with the
minimum values of tCK and tRC.
4. These parameters depend on the output loading conditions. specified values are obtained with
output open.
5. Power up sequence is further described in the "Functional Description" section.
6. AC Testing Conditions
Output Reference Level
1.4V
Output Load
See diagram below
Input Signal Levels
2.4V / 0.4V
Transition Time (Rise and Fall) of Input Signal
1 nS
Input Reference Level
1.4V
50 ohms
AC TEST LOAD
Z = 50 ohms
output
30pF
0.5 x VDDQ
7. Transition times are measured between VIH and VIL.
8. tHZ defines the time at which the outputs achieve the open circuit condition and is not referenced to
output level.
9. The value that shown on table are based on silicon simulation result. It will be changed according
to real product characteristic.
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相關(guān)代理商/技術(shù)參數(shù) |
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