參數(shù)資料
型號(hào)： VN5050J-E
廠商： 意法半導(dǎo)體
英文描述： Single channel high side driver for automotive applications
中文描述： 單通道面向汽車應(yīng)用的高邊驅(qū)動(dòng)器
文件頁數(shù)： 20/31頁
文件大?。?/td> 462K
代理商： VN5050J-E
Application information
VN5050J-E
20/31
3
Application information
Figure 27. Application schematic
3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (R
GND
only).
This can be used with any type of load.
The following is an indication on how to dimension the R
GND
resistor.
1.
R
GND
≤
600mV / (I
S(on)max
).
2.
R
GND
≥ (
V
CC
) / (-I
GND
)
where -I
GND
is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in R
GND
(when V
CC
<0: during reverse battery situations) is:
P
D
= (-V
CC
)
2
/R
GND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
S(on)max
becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
R
GND
will produce a shift (I
S(on)max
* R
GND
) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same R
GND
.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
V
CC
GND
OUTPUT
D
GND
R
GND
D
ld
μ
C
+5V
V
GND
STAT_DIS
INPUT
R
prot
R
prot
R
prot
+5V
STATUS
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