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參數(shù)資料
| 型號(hào)： | BYD12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Controlled avalanche rectifiers |
| 中文描述： | 控制雪崩整流器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | BYD12 |
1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Controlled avalanche rectifiers
BYD12 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD120
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD120) and symbol.
handbook, halfpage
a
MGL571
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYD12D
BYD12G
BYD12J
BYD12K
BYD12M
continuous reverse voltage
BYD12D
BYD12G
BYD12J
BYD12K
BYD12M
average forward current
200
400
600
800
1000
V
V
V
V
V
V
R
200
400
600
800
1000
V
V
V
V
V
A
I
F(AV)
T
amb
= 25
°
C; printed-circuit board
mounting, pitch 5 mm, see Fig.6;
averaged over any 20 ms period,
see Fig.2
0.82
I
FSM
non-repetitive peak forward current
t = 10 ms half sinewave;
T
j
= 25
°
C prior to surge;
V
R
= V
RRMmax
15
A
T
stg
T
j
storage temperature
65
65
+175
°
C
°
C
junction temperature
see Fig.3
+175
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|---|---|
| BYD12D | Controlled avalanche rectifiers |
| BYD12G | Controlled avalanche rectifiers |
| BYD12J | Controlled avalanche rectifiers |
| BYD12K | Controlled avalanche rectifiers |
| BYD12M | Controlled avalanche rectifiers |
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| BYD127Z | 制造商:ZOWIE 制造商全稱:Zowie Technology Corporation 功能描述:SURFACE MOUNT GLASS PASSIVATED JUNCTION ULTRAFAST EFFICIENT RECTIFIER |
| BYD12D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Controlled avalanche rectifiers |
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